Product Information

RSQ030P03TR

RSQ030P03TR electronic component of ROHM

Datasheet
MOSFET P-CH 30V 3A TSMT6
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7897 ea
Line Total: USD 1.79

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.3915
6000 : USD 0.3625
9000 : USD 0.3625
12000 : USD 0.3625
15000 : USD 0.3625

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.2978
6000 : USD 0.2907
9000 : USD 0.2812
24000 : USD 0.2788

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

RSQ030P03 Transistor 4V Drive Pch MOS FET RSQ030P03 z Structure z External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 z Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance.(90m at 4.5V) 2) High Power Package. (PD=1.25w) 0~0.1 (1) (2) (3) 3) High speed switching. 1pin mark 4) Low voltage drive. (4V) 0.16 0.4 Each lead has same dimensions Abbreviated symbol : TN z Applications DC-DC converter z Packaging specifications z Equivalent circuit Package Taping (6) (5) (4) Code TR Type Basic ordering unit 3000 (pieces) 2 RSQ030P03 1 (1)DRAIN (2)DRAIN (3)GATE (1) (2) (3) (4)SOURCE 1 ESD PROTECTION DIODE (5)DRAIN 2 BODY DIODE (6)DRAIN z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drainsource voltage VDSS 30 V Gatesource voltage VGSS 20 V Continuous ID 3 A Drain current 1 12 Pulsed IDP A Continuous IS 1 A Source current (Body diode) 1 Pulsed ISP 4 A 2 Total power dissipation PD 1.25 W Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 100 C / W Mounted on a ceramic board. Rev.A 1/4 1.6 2.8 0.3~0.6RSQ030P03 Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 30 V ID=1 , VmA, GS=0V Zero gate voltage drain current IDSS 1 A VDS=30V, VGS=0V Gate threshold voltage VGS(th) 1.0 V VDS=10V, ID=1mA 2.5 60 80 m ID=3A, VGS=10V 90 125 m ID=3A, VGS=4.5V Static drain-source on-state RDS(on) resistance 100 140 m ID=1.5A, VGS=4.0V Foward transfer admittance Yfs 1.5 S VDS=10V, ID=1.5A Input capacitance Ciss 440 pF VGS=0V VDS=10V, Output capacitance Coss 110 pF f=1MHz Reverse transfer capacitance Crss 80 pF Tur n-on delay time td(on) 10 ns ID=1.5A Rise time tr 13 ns VDD 15V VGS=10V Tur n-off delay time td(off) 40 ns RL=10 RG =10 Fall time tf 12 ns Total gate charge Qg 6.0 nC VDD 15V Gate-source charge Qgs 1.6 nC VGS=5V ID=3A Gate-drain charge Qgd 2.0 nC PULSED z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions VSD 1.2 V IS=1A, VGS=0V Forward voltage Rev.A 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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