Product Information

RS3E135BNGZETB

RS3E135BNGZETB electronic component of ROHM

Datasheet
MOSFET Nch 30V 13.5A Si MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2204 ea
Line Total: USD 1.22

2415 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2365 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0323
10 : USD 0.8566
100 : USD 0.687
500 : USD 0.5992
1000 : USD 0.5007
2500 : USD 0.4781
5000 : USD 0.4781
10000 : USD 0.4604
25000 : USD 0.4592

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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RS3E135BN Datasheet Nch 30V 13.5A Middle Power MOSFET llOutline V 30V DSS R (Max.) 7.4m DS(on) SOP8 I 13.5A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance. 2) Small surface mount package (SOP8). 3) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RS3E135BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 13.5 A D *1 I Pulsed drain current 54 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I 13.5 A AS *2 E Avalanche energy, single pulse 26 mJ AS *3 P 2.0 W D Power dissipation *4 P 1.4 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.001 RS3E135BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 62.5 /W thJA Thermal resistance, junction - ambient *4 R - - 89.2 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 13.5A - 5.7 7.4 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 13.5A - 8.5 10.9 GS D R Gate resistance f = 1MHz, open drain - 2.6 - G Forward Transfer *5 Y V = 5V, I = 13.5A 9.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 0.2mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2/11 20190527 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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