IPB100N06S2L05ATMA2 Infineon

Name: IPB100N06S2L05ATMA2
Brand: Infineon
SKU: IPB100N06S2L05ATMA2_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IPB100N06S2L05ATMA2 electronic component of Infineon

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPB100N06S2L05ATMA2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB100N06S2L05ATMA2 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	IPB100N06S2L05ATMA2
Manufacturer:	Infineon
Category:	MOSFETs
Description:	Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Datasheet:	IPB100N06S2L05ATMA2 Datasheet (PDF)

Price (USD)

1: USD 7.463 ea
Line Total: USD 7.46

Availability : 0

Qty	Unit Price
1	$ 7.463
10	$ 7.2878
30	$ 7.1714
100	$ 7.0533

IPB100N06S2L05ATMA2 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Tue. 28 Oct to Mon. 03 Nov

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 8.8607

Availability 0

Ship by Tue. 28 Oct to Mon. 03 Nov

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 8.8607

Availability 0

Ship by Tue. 28 Oct to Mon. 03 Nov

MOQ : 1000
Multiples : 1000

Qty	Unit Price
1000	$ 4.6846

Availability 0

Ship by Tue. 28 Oct to Mon. 03 Nov

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 7.463
10	$ 7.2878
30	$ 7.1714
100	$ 7.0533

Availability 0

Ship by Fri. 24 Oct to Tue. 28 Oct

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 5.2545
10	$ 3.4382
100	$ 2.8169
500	$ 2.4026
1000	$ 2.3923

Availability 0

Ship by Fri. 24 Oct to Tue. 28 Oct

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 5.672
5	$ 3.7179
12	$ 3.5145

Specifications

Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
Technology Optimos Optimos
Mounting Smd Smd
Case Pg - To263 - 3 Pg - To263 - 3
Polarisation Unipolar Unipolar
Type Of Transistor N - Mosfet N - Mosfet
Drain-Source Voltage 55 V 55 V
Drain Current 100 A 100 A
On-State Resistance 4.4 mOhms 4.4 mOhms
Gate-Source Voltage 20 V 20 V
Gate Charge 170 nC 170 nC
Power Dissipation 300 W 300 W

We are delighted to provide the IPB100N06S2L05ATMA2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB100N06S2L05ATMA2 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IPB100N06S2L05ATMA2 is a N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by Infineon. It is unipolar and rated for a maximum continuous drain current of 100A and a maximum pulse drain current of 395A at a drain source voltage of 55V. It has a total power dissipation limit of 300W. The package of this transistor is PG-TO263-3.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
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INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
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Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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