RSJ301N10FRATL ROHM

RSJ301N10FRA Datasheet Nch 100V 30A Power MOSFET llOutline TO-263S V 100V DSS SC-83 R (Max.) 46m DS(on) LPT(S) I 30A D P 50W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching speed 3) High power small mold package 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 24 Type Switching Quantity (pcs) 1000 Taping code TL Marking RSJ301N10 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 100 V DSS *1 I Continuous drain current 30 A D *2 I Pulsed drain current 60 A DP V Gate - Source voltage 20 V GSS *1 P Power dissipation 50 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.004 RSJ301N10FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 2.5 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 116.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 100V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = 10V , I = 1mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 15A - 33 46 GS D Static drain - source *3 R m DS(on) on - state resistance V = 4.0V, I = 15A - 36 50 GS D R Gate resistance f = 1MHz, open drain - 4.8 - G Forward Transfer *3 Y V = 10V, I = 15A 14 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw10s, Duty cycle 1% *3 Pulsed www.rohm.com 2/11 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.