RSL020P03TR ROHM

RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT6 z Features 1) Low On-resistance. 2) High speed switching. zApplications Abbreviated symbol : SL Switching z Packaging specifications z Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 3000 2 RSL020P03 1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage V 20 V GSS Continuous ID 2 A Drain current 1 Pulsed IDP 8 A Source current Continuous IS 0.8 A (Body diode) 1 Pulsed I 8 A SP 2 Total power dissipation PD 1 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth(ch-a) 125 C/W Mounted on a ceramic board Rev.B 1/4 0.2Max.RSL020P03 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS= 20V, VDS=0V Drain-source breakdown voltage V 30 VI = 1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 80 120 m I = 2A, V = 10V D GS Static drain-source on-state RDS (on) 125 190 m ID=1A, VGS= 4.5V resistance 140 210 m ID= 1A, VGS= 4.0V Forward transfer admittance Yfs 1.4 SVDS= 10V, ID= 1A Input capacitance C 350 pF V = 10V iss DS Output capacitance Coss 80 pF VGS=0V Reverse transfer capacitance Crss 50 pF f=1MHz Turn-on delay time t 11 ns VDD 15V d (on) ID= 1A Rise time tr 11 ns VGS= 10V Turn-off delay time td (off) 35 ns RL=15 Fall time tf 11 ns RG =10 Q 3.9 nC V 15V V = 5V Total gate charge g DD GS ID= 2A Gate-source charge Qgs 1.3 nC RL=7.5 RG =10 Gate-drain charge Qgd1.1 nC Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.8A, VGS=0V Rev.B 2/4