Data Sheet 4V Drive Nch MOSFET RSJ550N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High Power Package. 2.54 0.4 0.78 3) 4V drive. 5.08 2.7 (1) (2) (3) Application Switching Packaging specifications Inner circuit 1 Package Taping Type Code TL Basic ordering unit (pieces) 1000 2 RSJ550N10 (1) (2) (3) (1) Gate (2) Drain 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 V GSS Continuous I *3 55 A D Drain current *1 Pulsed I 110 A DP *3 Continuous I 55 A Source current S (Body Diode) *1 Pulsed I 110 A SP *2 Power dissipation P 100 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 P 10s, Duty cycle1% W *2 T =25C C *3 Please use within the range of SOA. Thermal resistance Parameter Symbol Limits Unit * Channel to Case Rth (ch-c) 1.25 C / W * T =25C C www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/6 13.1 3.0 9.0 1.0 1.2Data Sheet RSJ550N10 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 100 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =100V, V =0V DSS DS GS Gate threshold voltage V 1 - 2.5 V V =10V, I =1mA GS (th) DS D - 12 16.8 I =27.5A, V =10V Static drain-source on-state D GS R * m DS (on) resistance - 13.5 18.9 I =27.5A, V =4V D GS ** Forward transfer admittance l Y l30 - - S V =10V, I =27.5A fs DS D Input capacitance C - 6150 - pF V =25V iss DS Output capacitance C - 460 - pF V =0V oss GS Reverse transfer capacitance C - 320 - pF f=1MHz rss Turn-on delay time t - 32 - ns V 50V, I =27.5A ** d(on) DD D Rise time t - 105 - ns V =10V ** r GS Turn-off delay time t - 375 - ns R =1.82 d(off)** L Fall time t ** - 360 - ns R =10 f G Total gate charge Q ** - 143 - nC V 50V, I =27.5A g DD D Gate-source charge Q ** - 16 - nC V =10V gs GS Gate-drain charge Q -34 - nC ** gd *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =55A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.06 - Rev.A