RSQ015N06TR ROHM

RSQ015N06TR electronic component of ROHM
RSQ015N06TR ROHM
RSQ015N06TR MOSFETs
RSQ015N06TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RSQ015N06TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSQ015N06TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RSQ015N06TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET SW MOSFET MID PWR N-CH 60V 1.5A
Datasheet: RSQ015N06TR Datasheet (PDF)
Price (USD)
1558: USD 0.1669 ea
Line Total: USD 260.03 
Availability : 0
  
QtyUnit Price
1558$ 0.1669
1611$ 0.1615

Availability 91
Ship by Tue. 02 Sep to Fri. 05 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5192
10$ 1.2098
30$ 0.7935
100$ 0.6098
500$ 0.5481
1000$ 0.5165


Availability 1735
Ship by Tue. 26 Aug to Mon. 01 Sep
MOQ : 1558
Multiples : 1
QtyUnit Price
1558$ 0.1669
1611$ 0.1615

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSQ015N06TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSQ015N06TR and other electronic components in the MOSFETs category and beyond.

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RSQ015N06 Datasheet Nch 60V 1.5A Small Signal MOSFET llOutline SOT-457T V 60V DSS SC-95 R (Max.) 290m DS(on) TSMT6 I 1.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Quantity (pcs) 3000 Taping code TR Marking PX llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 1.5 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.004 RSQ015N06 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -2.8 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 1.5A - 210 290 GS D Static drain - source *4 R V = 4.5V, I = 1.5A - 240 330 m DS(on) GS D on - state resistance V = 4V, I = 1.5A - 255 350 GS D R Gate resistance f = 1MHz, open drain - 10 - G Forward Transfer *4 Y V = 10V, I = 1.5A 1.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a seramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.004 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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