X-On Electronics has gained recognition as a prominent supplier of RSQ015P10TR mosfet across the USA, India, Europe, Australia, and various other global locations. RSQ015P10TR mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RSQ015P10TR

RSQ015P10TR electronic component of ROHM
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See Product Specifications
Part No.RSQ015P10TR
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET 4V Drive Pch MOSFET
Datasheet: RSQ015P10TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7996 ea
Line Total: USD 0.8

Availability - 303
Ships to you between
Thu. 06 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
303 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7996
10 : USD 0.6768
30 : USD 0.6142
100 : USD 0.5539
500 : USD 0.4532
1000 : USD 0.4351

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Series
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Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
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We proudly offer the RSQ015P10TR MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RSQ015P10TR MOSFET.

RSQ015P10 Pch -100V -1.5A Power MOSFET Data Sheet l Outline (6) V -100V DSS TSMT6 (5) (4) R (Max.) 470mW DS(on) I -1.5A (1) D (2) P 1.25W D (3) l l Features Inner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking ZN lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V -100 DSS *1 Continuous drain current I 1.5 A D *2 Pulsed drain current A I 6.0 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.C 1/11Data Sheet RSQ015P10 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 C/W thJA Thermal resistance, junction - ambient *4 R - - 208 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -100 - - V (BR)DSS GS D voltage V Breakdown voltage I = -1mA (BR)DSS D - -109 - mV/C temperature coefficient T referenced to 25C j I V = -100V, V = 0V Zero gate voltage drain current - - -1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = -10V, I = -1mA Gate threshold voltage -1.0 - -2.5 V GS (th) DS D V I = -1mA Gate threshold voltage (GS)th D - 3.2 - mV/C temperature coefficient T referenced to 25C j V = -10V, I = -1.5A - 350 470 GS D V = -4.5V, I = -0.75A - 380 510 GS D Static drain - source *5 R mW DS(on) on - state resistance V = -4.0V, I = -0.75A - 400 540 GS D V = -10V, I = -1.5A, T =125C - 610 850 GS D j R Gate input resistannce f = 1MHz, open drain - 8.5 - W G *5 Transconductance V = -10V, I = -1.5A 1.5 4.0 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.C 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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