X-On Electronics has gained recognition as a prominent supplier of RSQ035N06HZGTR mosfet across the USA, India, Europe, Australia, and various other global locations. RSQ035N06HZGTR mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RSQ035N06HZGTR ROHM

RSQ035N06HZGTR electronic component of ROHM
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See Product Specifications
Part No.RSQ035N06HZGTR
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET NCH 60V 3.5A SMALL SIGNAL MOSF
Datasheet: RSQ035N06HZGTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8749 ea
Line Total: USD 0.87

Availability - 3040
Ships to you between
Tue. 11 Jun to Thu. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2742 - WHS 1


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7383
10 : USD 0.6417
100 : USD 0.4542
500 : USD 0.391
1000 : USD 0.3416
3000 : USD 0.3059
6000 : USD 0.3013
9000 : USD 0.2909
24000 : USD 0.2887

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RSQ035N06HZGTR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSQ035N06HZGTR and other electronic components in the MOSFET category and beyond.

RSQ035N06HZG Datasheet Nch 60V 3.5A Small Signal MOSFET llOutline SOT-457T V 60V DSS SC-95 R (Max.) 70m DS(on) TSMT6 I 3.5A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking PH llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 3.5 A D *1 I Pulsed drain current 14 A DP V Gate - Source voltage 20 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180528 - Rev.001 RSQ035N06HZG Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 3.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -4.4 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 3.5A - 50 70 GS D Static drain - source *4 R V = 4.5V, I = 3.5A - 58 82 m DS(on) GS D on - state resistance V = 4.0V, I = 3.5A - 62 87 GS D R Gate resistance f = 1MHz, open drain - 8.1 - G Forward Transfer *4 Y V = 10V, I = 3.5A 3.0 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180528 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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