RSQ045N03TR ROHM

RSQ045N03TR electronic component of ROHM
RSQ045N03TR ROHM
RSQ045N03TR MOSFETs
RSQ045N03TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RSQ045N03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSQ045N03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RSQ045N03TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET N-CH 30V 4.5A TSMT6
Datasheet: RSQ045N03TR Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3168
6000$ 0.2979
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.882
10$ 0.7492
N/A

Obsolete

Availability 0
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3069
6000$ 0.3014
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSQ045N03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSQ045N03TR and other electronic components in the MOSFETs category and beyond.

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RSQ045N03 Nch 30V 4.5A Power MOSFET Datasheet lOutline (6) V 30V DSS TSMT6 (5) (4) R (Max.) 38mW DS(on) I 4.5A (1) D (2) P 1.25W D (3) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking QL lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS *1 Continuous drain current I 4.5 A D *2 Pulsed drain current A I 18 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.B 1/11Data Sheet RSQ045N03 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 100 C/W thJA Thermal resistance, junction - ambient *4 R - - 208 C/W thJA lElectrical characteristics(T = 25C) ,unless otherwise specified a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I =1mA Breakdown voltage (BR)DSS D - 26 - mV/C temperature coefficient T referenced to 25C j I V = 30V, V = 0V Zero gate voltage drain current - - 1 mA DSS DS GS Gate - Source leakage current I V = 20V, V = 0V - - 10 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I =1mA Gate threshold voltage (GS)th D - -2.8 - mV/C temperature coefficient T referenced to 25C j V =10V, I =4.5A - 27 38 GS D V =4.5V, I =4.5A - 36 51 GS D Static drain - source *5 R m W DS(on) on - state resistance V =4.0V, I =4.5A - 40 56 GS D V =10V, I =4.5A, T =125C - 50 70 GS D j R Gate input resistannce f = 1MHz, open drain - 6 - W G *5 Transconductance V =10V, I =4.5A 3.5 7.0 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) *5 Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.10 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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