RSX1001T3 ROHM

Data Sheet Schottky barrier diode RSX1001T3 Applications Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common type. (1) (2) (3) (TO-220) 2) Low I R 3) High reliability Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 30 V RM Reverse voltage (DC) V 30 V R 10 Average rectified forward current (*1) Io A 150 Forward current surge peak (60Hz / 1cyc) (*1) I A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132 C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.45 V I =5A F F I Reverse current - - 500 A V =30V R R Reverse recovery time - - 2.5 junction to case jc C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.B 1/3RSX1001T3 Data Sheet Electrical characteristic curves 1000000 10 10000 Ta=150 Ta=150 f=1MHz 100000 Ta=125 Ta=125 Ta=25 10000 1 Ta=75 Ta=75 1000 Ta=-25 1000 Ta=25 100 0.1 100 Ta=-25 10 1 0.01 10 0 5 10 15 20 25 30 0 100 200 300 400 500 600 0 5 10 15 20 25 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) F R R V -Ct CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS R F F R R 500 1100 420 Ta=25 Ta=25 450 1080 Ta=25 I =5A V =30V F R f=1MHz 410 n=30pcs 400 n=30pcs 1060 V =0V R 350 1040 n=10pcs 400 300 1020 250 1000 390 200 980 150 960 380 100 940 AVE:402.0mV AVE:148.6uA 50 920 AVE:1006.7pF 370 0 900 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 1000 300 30 Ta=25 Ifsm Ifsm 1cyc I =0.5A F 250 25 I =1A R 8.3ms 8.3ms Irr=0.25*I R 8.3ms 1cyc 200 100 20 n=10pcs 150 15 100 10 10 50 5 AVE:17.2ns AVE:235.0A 0 0 1 1 10 100 I DISPERSION MAP trr DISPERSION MAP NUMBER OF CYCLES FSM I -CYCLE CHARACTERISTICS FSM 10 100 1000 IM=100mA I =5A F Ifsm 8 t DC D=1/2 1ms time 10 Rth(j-a) Sin( =180) 6 300us 100 4 1 Rth(j-c) 2 0 10 0.1 0 5 10 15 20 1 10 100 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENT : Io(A) I -t CHARACTERISTICS Rth-t CHARACTERISTICS FSM Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B PEAK SURGE PEAK SURGE FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) F F FORWARD CURRENT:I (A) FSM FORWARD CURRENT:I (A) FSM REVERSE CURRENT:I (uA) TRANSIENT REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:I (uA) R R THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)