Product Information

RSX051VYM30FHTR

RSX051VYM30FHTR electronic component of ROHM

Datasheet
ROHM Semiconductor small mold type (TUMD2M) schottky barrier diode for general rectification.

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3999 ea
Line Total: USD 0.4

93925 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
91160 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3999
10 : USD 0.2242
100 : USD 0.1383
500 : USD 0.1146
1000 : USD 0.0885
3000 : USD 0.0723
9000 : USD 0.061
24000 : USD 0.0586
45000 : USD 0.0573

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
LoadingGif

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RSX051VYM30FH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 30 V R I 0.5 A o I 5 A FSM Features Inner Circuit High reliability Small mold type Low V and low I F R Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Basic Ordering Unit(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking YP Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 30 V RM V Reverse voltage Reverse direct voltage 30 V R Glass epoxy mounted I 60Hz half sin waveformresistive load Average rectified forward current 0.5 A o T =130 Max. c 60Hz half sin waveformNon-repetitive I Peak forward surge current 5 A FSM one cycleT =25 a (1) T Junction temperature - 150 j T Storage temperature - -40 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics j Parameter Symbol Conditions Min. Typ. Max. Unit V Forward voltage I =0.5A - 0.35 0.39 V F F Reverse current I V =30V - 40 200 A R R Attention www.rohm.com 1/5 2016 ROHM Co., Ltd. All rights reserved. 2017/04/12 Rev.001RSX051VYM30FH Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2017/04/12 Rev.001

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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