Product Information

RSX101VA-30FHTR

RSX101VA-30FHTR electronic component of ROHM

Datasheet
SCHOTTKY RECT, AEC-Q101, 1A, SOD-323HE
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.5325 ea
Line Total: USD 2.66

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 5
Multiples : 1
5 : USD 0.55
25 : USD 0.307
100 : USD 0.2156
250 : USD 0.1597
500 : USD 0.1349
1000 : USD 0.126

Read More Specifications

     
Manufacturer
Product Category
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Diode Case Style
No. Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Product Range
Automotive Qualification Standard
Svhc
Semiconductor Technology
LoadingGif

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Additional Infomation About Product

Data Sheet AEC-Q101 Qualified Schottky barrier Diode RSX101VA-30FH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 1.1 0.170.1 0.05 1.30.05 Features 1) Small mold type. (TUMD2) 2) Low V F 3) High reliability. TUMD2 Construction Silicon epitaxial planar Structure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) + day Taping specifications (Unit : mm) 1.550.1 0.250.05 2.00.05 4.00.1 0 1.430.05 4.00.1 1.00.2 0 0.90.08 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 30 V RM Reverse voltage (DC) V 30 V R Average rectified forward current Io 1 A I Forward current surge peak (60Hz1cyc) 5 A FSM Junction temperature Tj 150 C Storage temperature 40 to 150 Tstg C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - 0.43 0.47 V I =1A F F I 1 -15 40 AV =5V R R Reverse current I 2 V =30V - 40 200 A R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 2.0 0.8 0.5RSX101VA-30FH Data Sheet 1000000 1000 1000 Ta=150 Ta=150 Ta=125 f=1MHz 100000 Ta=125 10000 100 100 Ta=75 1000 Ta=75 Ta=-25 Ta=25 100 10 10 Ta=25 10 Ta=-25 1 1 1 0.1 0 100 200 300 400 500 600 010 20 30 0 5 10 15 20 25 30 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 500 200 450 Ta=25 Ta=25 Ta=25 190 450 VR=30V f=1MHz IF=1A 180 400 440 n=30pcs VR=0V n=30pcs n=10pcs 350 170 300 160 430 250 150 200 140 420 150 130 AVE:36.59uA 100 120 410 AVE:159.7pF 50 110 AVE:423.3mV 0 100 400 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 30 30 Ta=25 1cyc Ifsm IF=0.5A 25 25 Ifsm 25 IR=1A Irr=0.25*IR 8.3ms 8.3ms 8.3ms 20 20 20 n=10pcs 1cyc 15 15 15 10 10 10 AVE:15.6A 5 5 5 AVE:10.4ns 0 0 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS 30 1000 Mounted on epoxy board 1 IM=10mA IF=0.2A Ifsm 25 0.8 t D=1/2 Rth(j-a) time 1ms 20 0.6 DC 300us Sin(180) 15 100 Rth(j-c) 0.4 10 0.2 5 0 0 10 00.5 11.5 2 1 10 100 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENTIo(A) IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) TRANSIENT REVERSE CURRENT:IR(uA) REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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