RTQ020N03TR ROHM

RTQ020N03TR electronic component of ROHM
RTQ020N03TR ROHM
RTQ020N03TR MOSFETs
RTQ020N03TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RTQ020N03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTQ020N03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.RTQ020N03TR
Manufacturer:ROHM
Category:MOSFETs
Description:MOSFET N-CH 30V 2A TSMT6
Datasheet:RTQ020N03TR Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 0.9512 ea
Line Total: USD 0.95 
Availability : 856
  
Ship by Mon. 22 Jun to Wed. 24 Jun
QtyUnit Price
1$ 0.9512
10$ 0.595
100$ 0.3542
500$ 0.2706
1000$ 0.2464
3000$ 0.2035
6000$ 0.1991
24000$ 0.1881
  

Availability856
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9512
10$ 0.595
100$ 0.3542
500$ 0.2706
1000$ 0.2464
3000$ 0.2035
6000$ 0.1991
24000$ 0.1881


Availability2910
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 382
Multiples : 1
QtyUnit Price
382$ 1.0829


Availability946
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 975
Multiples : 1
QtyUnit Price
975$ 0.2669
1011$ 0.2572

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Brand Category
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We are delighted to provide the RTQ020N03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTQ020N03TR and other electronic components in the MOSFETs category and beyond.

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RTQ020N03 Datasheet Nch 30V 2A Small Signal MOSFET llOutline SOT-457T V 30V DSS SC-95 R (Max.) 125m DS(on) TSMT6 I 2.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking QS llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 2.0 A D *1 I Pulsed drain current 8.0 A DP V Gate - Source voltage 12 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20180130 - Rev.001 RTQ020N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2A - 89 125 GS D Static drain - source *4 R V = 4.0V, I = 2A - 94 132 m DS(on) GS D on - state resistance V = 2.5V, I = 2A - 138 194 GS D R Gate resistance f = 1MHz, open drain - 9.0 - G Forward Transfer *4 Y V = 10V, I = 2A 2.0 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180130 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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