RTQ020N03TR ROHM

RTQ020N03TR electronic component of ROHM
RTQ020N03TR ROHM
RTQ020N03TR MOSFETs
RTQ020N03TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RTQ020N03TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RTQ020N03TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RTQ020N03TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET N-CH 30V 2A TSMT6
Datasheet: RTQ020N03TR Datasheet (PDF)
Price (USD)
1: USD 0.6863 ea
Line Total: USD 0.69 
Availability : 856
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 0.6863
10$ 0.535
100$ 0.3358
500$ 0.253
1000$ 0.2299
3000$ 0.2035
6000$ 0.1892
9000$ 0.1793
24000$ 0.1738

Availability 856
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6863
10$ 0.535
100$ 0.3358
500$ 0.253
1000$ 0.2299
3000$ 0.2035
6000$ 0.1892
9000$ 0.1793
24000$ 0.1738


Availability 955
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 412
Multiples : 1
QtyUnit Price
412$ 0.632


Availability 5820
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 412
Multiples : 1
QtyUnit Price
412$ 0.632


Availability 1934
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 326
Multiples : 1
QtyUnit Price
326$ 0.7982
500$ 0.6188
1000$ 0.4075


Availability 2910
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 412
Multiples : 1
QtyUnit Price
412$ 0.632

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Length
Series
Transistor Type
Type
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Cnhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RTQ020N03TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTQ020N03TR and other electronic components in the MOSFETs category and beyond.

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RTQ020N03 Datasheet Nch 30V 2A Small Signal MOSFET llOutline SOT-457T V 30V DSS SC-95 R (Max.) 125m DS(on) TSMT6 I 2.0A D P 1.25W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking QS llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 2.0 A D *1 I Pulsed drain current 8.0 A DP V Gate - Source voltage 12 V GSS *2 P 1.25 W D Power dissipation *3 P 0.95 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2017 ROHM Co., Ltd. All rights reserved. 20180130 - Rev.001 RTQ020N03 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 100 /W thJA Thermal resistance, junction - ambient *3 R - - 132 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2A - 89 125 GS D Static drain - source *4 R V = 4.0V, I = 2A - 94 132 m DS(on) GS D on - state resistance V = 2.5V, I = 2A - 138 194 GS D R Gate resistance f = 1MHz, open drain - 9.0 - G Forward Transfer *4 Y V = 10V, I = 2A 2.0 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180130 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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