RZF020P01TL ROHM

RZF020P01TL electronic component of ROHM
RZF020P01TL ROHM
RZF020P01TL MOSFETs
RZF020P01TL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RZF020P01TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RZF020P01TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RZF020P01TL
Manufacturer: ROHM
Category: MOSFETs
Description: P-Channel 12 V 2A (Ta) 800mW (Ta) Surface Mount TUMT3
Datasheet: RZF020P01TL Datasheet (PDF)
Price (USD)
5: USD 0.306 ea
Line Total: USD 1.53 
Availability : 2880
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
5$ 0.306
50$ 0.243
150$ 0.162
500$ 0.123
3000$ 0.1128
6000$ 0.1068

Availability 10402
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8662
10$ 0.505
100$ 0.3231
500$ 0.2453
1000$ 0.2233
3000$ 0.187
6000$ 0.1793
9000$ 0.1782
24000$ 0.1705


Availability 2880
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.306
50$ 0.243
150$ 0.162
500$ 0.123
3000$ 0.1128
6000$ 0.1068


Availability 5724
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 270
Multiples : 1
QtyUnit Price
270$ 1.0374
500$ 0.6357
1000$ 0.4012
3000$ 0.3987


Availability 5820
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 304
Multiples : 1
QtyUnit Price
304$ 1.0447

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the RZF020P01TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RZF020P01TL and other electronic components in the MOSFETs category and beyond.

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RZF020P01 Datasheet Pch -12V -2A Middle Power MOSFET llOutline SOT-323T V -12V DSS R (Max.) 105m DS(on) TUMT3 I 2A D P 0.8W D llInner circuit llFeatures 1) Low On-resistance 2) Built-in G-S Protection Diode. 3) Small surface mount package(TUMT3) 4) Low voltage drive(1.5V drive) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking ZE llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 2 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 10 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160118 - Rev.001 RZF020P01 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -2A - 75 105 GS D V = -2.5V, I = -1A - 105 145 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1A - 150 225 GS D V = -1.5V, I = -0.4A - 200 400 GS D R Gate resistance f = 1MHz, open drain - 3.1 - G Forward Transfer *4 Y V = -6V, I = -2A 2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20160118 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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