X-On Electronics has gained recognition as a prominent supplier of RZF020P01TL mosfet across the USA, India, Europe, Australia, and various other global locations. RZF020P01TL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RZF020P01TL ROHM

Hot RZF020P01TL electronic component of ROHM
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Part No.RZF020P01TL
Manufacturer: ROHM
Category:MOSFET
Description: P-Channel 12 V 2A (Ta) 800mW (Ta) Surface Mount TUMT3
Datasheet: RZF020P01TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2032 ea
Line Total: USD 1.02

Availability - 2842
Ships to you between
Fri. 14 Jun to Wed. 19 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2842 - WHS 1


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 5
Multiples : 5
5 : USD 0.2032
50 : USD 0.1615
150 : USD 0.1436
500 : USD 0.1214
3000 : USD 0.1113
6000 : USD 0.1054

28453 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5244
10 : USD 0.4278
100 : USD 0.3151
500 : USD 0.2576
1000 : USD 0.2162
3000 : USD 0.1863
9000 : USD 0.1863
24000 : USD 0.1828

11155 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 188
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250 : USD 0.542
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1000 : USD 0.5054
2500 : USD 0.4905
5000 : USD 0.4774
10000 : USD 0.4657

9244 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 183
Multiples : 1
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500 : USD 0.1804
1000 : USD 0.169
2000 : USD 0.1674
3000 : USD 0.1603
6000 : USD 0.1508

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the RZF020P01TL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RZF020P01TL and other electronic components in the MOSFET category and beyond.

RZF020P01 Datasheet Pch -12V -2A Middle Power MOSFET llOutline SOT-323T V -12V DSS R (Max.) 105m DS(on) TUMT3 I 2A D P 0.8W D llInner circuit llFeatures 1) Low On-resistance 2) Built-in G-S Protection Diode. 3) Small surface mount package(TUMT3) 4) Low voltage drive(1.5V drive) llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TL Marking ZE llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -12 V DSS I Continuous drain current 2 A D *1 I Pulsed drain current 6 A DP V Gate - Source voltage 10 V GSS *2 P 0.8 W D Power dissipation *3 P 0.75 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2016 ROHM Co., Ltd. All rights reserved. 20160118 - Rev.001 RZF020P01 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 156 /W thJA Thermal resistance, junction - ambient *3 R - - 167 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -2A - 75 105 GS D V = -2.5V, I = -1A - 105 145 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1A - 150 225 GS D V = -1.5V, I = -0.4A - 200 400 GS D R Gate resistance f = 1MHz, open drain - 3.1 - G Forward Transfer *4 Y V = -6V, I = -2A 2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30x30x0.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20160118 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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