Product Information

RZL035P01TR

RZL035P01TR electronic component of ROHM

Datasheet
MOSFET Med Pwr, Sw MOSFET P Chan, -12V, -3.5A
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3744 ea
Line Total: USD 1.37

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.2838
6000 : USD 0.2669

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.8228

0 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.2871
6000 : USD 0.2848
9000 : USD 0.2753
24000 : USD 0.2717

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

1.5V Drive Pch MOSFET RZL035P01 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT6 z Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : YB z Application Switching z Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 RZL035P01 z Absolute maximum ratings (Ta=25C) z Inner circuit Parameter Symbol Limits Unit (6) (5) (4) Drain-source voltage VDSS 12 V Gate-source voltage V 10 V GSS 2 Continuous ID 3.5 A Drain current 1 Pulsed IDP 14 A Source current Continuous I 0.8 A S 1 1 (Body diode) Pulsed ISP 14 A 2 (1) Drain Total power dissipation PD 1.0 W (2) Drain Channel temperature Tch 150 C (3) Gate (1) (2) (3) (4) Source Range of Storage temperature Tstg 55 to +150 C (5) Drain 1 ESD PROTECTION DIODE 1 Pw10s, Duty cycle1% (6) Drain 2 BODY DIODE 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 125 C / W When mounted on a ceramic board. www.rohm.com 2009.12 - Rev.A 1/4 c 2009 ROHM Co., Ltd. All rights reserved. 0.2Max. RZL035P01 Data Sheet z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 12 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 12V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 6V, ID= 1mA 26 36 m ID= 3.5A, VGS= 4.5V Static drain-source on-state 36 50 m I = 1.7A, V = 2.5V D GS R DS (on) resistance 46 69 m ID= 1.7A, VGS= 1.8V m ID= 0.7A, VGS= 1.5V 66 132 Forward transfer admittance Y 5.5 SV = 6V, I = 3.5A fs DS D Input capacitance Ciss 1940 pF VDS= 6V Output capacitance Coss 260 pF VGS=0V Reverse transfer capacitance C 240 pF f=1MHz rss td (on) Turn-on delay time 10 ns VDD 6V ID= 1.7A tr Rise time 50 ns VGS= 4.5V td (off) Turn-off delay time 350 ns RL 3.5 tf Fall time 180 ns RG=10 Total gate charge Qg 20 nC VDD 6V, ID= 3.5A Gate-source charge Q 3.5 nC V = 4.5V gs GS RL 1.7 , RG=10 Gate-drain charge Qgd3.0 nC Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 3.5A, VGS=0V Pulsed www.rohm.com 2009.12 - Rev.A 2/4 c 2009 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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