Product Information

SCS112AGC

SCS112AGC electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 12A

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 13.9286 ea
Line Total: USD 13.93

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1000
1 : USD 31.1382
5 : USD 24.26
20 : USD 15.2173
60 : USD 10.915

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 15.456
2 : USD 10.108
5 : USD 9.562

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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SiC Schottky Barrier Diode SCS106AG Applications Dimensions (Unit : mm) Structure Switching power supply Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : O-220AC Absolute maximum ratings (Tj=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 600 V RM Reverse voltage (DC) V 600 V R 1 Continuous forward current I A F 6* 2 21* A I Surge no repetitive forward current FSM 3 86* A 4 Repetitive peak forward current I A 29* FRM 5 Total power disspation P W D 65* Junction temperature 175 Tj C Range of storage temperature 55 to 175 Tstg C 2.3 Junction to case Rth(j-c) C / W (*1)Tc=143C (*2)PW=8.3ms sinusoidal,Tj=25C (*3)PW=10 s square,Tj=25C (*4)Tc=100C,Tj=150C,Duty cycle=10% (*5)Tc=25C Electrical characteristics (Tj=25C) Parameter Conditions Symbol Min. Typ. Max. Unit DC blocking voltage V 600 - - V I =0.12mA DC R -1.5 1.7 V I =6A,Tj=25C F V Forward voltage F -1.82 - V I =6A,Tj=175C F - 1.2 120 AV =600V,Tj=25C R I Reverse current R -24 - AV =600V,Tj=175C R - 260 - pF V =1V,f=1MHz R Total capacitance C -28 - pF V =600V,f=1MHz R Total capacitive charge Qc - 12 - nC V =400V,di/dt=230A/s R V =400V,di/dt=230A/s Switching time tc - 18 - ns R www.rohm.com 1/3 2012.04 - Rev.B 2012 ROHM Co., Ltd. All rights reserved.DataSheet SCS106AG Electrical characteristic curves (Ta=25 C) Fig.1 V -I Characteristics F F Fig.2 V -I Characteristics F F 100 10 Ta=-25 pulsed pulsed 9 Ta= 25 10 8 7 Ta= 175 1 6 Ta= 125 Ta= 25 Ta= 175 5 Ta= 75 0.1 4 Ta=-25 3 Ta= 125 0.01 2 1 Ta= 75 0.001 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 FORWARD VOLTAGE : V (V) F FORWARD VOLTAGE : V (V) F Fig.3 V -I Characteristics R R Fig.4 V -Ct Characteristics R 1,000 100 Ta= 175 Ta= 125 10 Ta= 75 100 Ta= 25 1 0.1 10 Ta=-25 0.01 Ta=25 f=1MHz 0.001 1 0 200 400 600 0.01 0.1 1 10 100 1000 REVERSE VOLTAGE: V (V) R REVERSE VOLTAGE : V V R Fig.5 Thermal Resistance vs Pulse Width Fig.6 Power Dissipation 70 10 Ta=25 Single Pulse 60 50 1 40 30 0.1 20 10 0.01 0 0 25 50 75 100 125 150 175 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width Pw s CASE TEMPERATURE : Tc ( ) www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.04 - Rev.B 2/3 REVERSE CURRENT ( A) FORWARD CURRENT: I (A) F Thermal Resistance : /W CAPACITANCE BETWEEN TERMINALS : Ct pF Power Dissipation (W) FORWARD CURRENT: I (A) F

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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