SCS120KG SiC Schottky Barrier Diode Datasheet Outline (1) TO-220AC V 1200V R I 20A F Q 70nC C (3) (2) Features Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode 3) High-speed switching possible (2) Cathode (3) Anode (2) (3) Packaging specifications Packaging Tube Reel size (mm) - Construction Tape width (mm) - Silicon carbide epitaxial planer type Type Basic ordering unit (pcs) 50 Taping code - Marking SCS120KG Absolute maximum ratings (Tj = 25C) Parameter Symbol Value Unit Reverse voltage (repetitive peak) V 1200 V RM V Reverse voltage (DC) 1200 V R 1 I Continuous forward current A F 20* 2 A 84* Surge no repetitive forward current I FSM 3 A 358* 4 I Repetitive peak forward current A FRM 60* 5 Total power dissipation P W D 130* Junction temperature Tj 175 C Range of storage temperature Tstg 55 to 175 C Thermal resistance, junction to case Rth(j-c) 1.1 C/W *1 Tc=108C *2 PW=8.3ms sinusoidal,Tj=25C *3 PW=10s square,Tj=25C *4 Tc=100C,Tj=150C,Duty cycle=10% *5 Tc=25C www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.01 - Rev.B 1/5Data Sheet SCS120KG Electrical characteristics (Tj = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. V I =0.4mA DC blocking voltage 1200 - - V DC R I =20A,Tj=25C - 1.5 1.75 V F V Forward voltage F I =20A,Tj=175C - 2.0 - V F V =1200V,Tj=25C - 20 400 A R I Reverse current R V =120V,Tj=175C - 240 - A R V =1V,f=1MHz - 1300 - pF R Total capacitance C V =800V,f=1MHz - 100 - pF R Total capacitive charge Qc V =800V,di/dt=500A/s - 70 - nC R V =800V,di/dt=500A/s Switching time tc - 18 - ns R www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.01 - Rev.B 2/5