SCS208AGHR ROHM

Name: SCS208AGHR
Brand: ROHM
SKU: SCS208AGHR_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SCS208AGHR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. SCS208AGHR Schottky Diodes & Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No.

SCS208AGHR

Manufacturer:

ROHM

Category:

Schottky Diodes & Rectifiers

Description:

SIC SCHOTTKY DIODE, 650V, 8A, TO-220AC

Datasheet:

SCS208AGHR Datasheet (PDF)

Shipping Charges:

Click here for details

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Price (USD)

1: USD 8.5168 ea
Line Total: USD 8.52

Availability : 0

Qty	Unit Price
1	$ 8.5168
10	$ 6.959
100	$ 5.2567
500	$ 4.948
1000	$ 4.3042
2000	$ 4.1807

SCS208AGHR More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability0

Ship by Wed. 24 Jun to Tue. 30 Jun

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 8.5168
10	$ 6.959
100	$ 5.2567
500	$ 4.948
1000	$ 4.3042
2000	$ 4.1807

Specifications

Manufacturer ROHMROHM
Product Category Schottky Diodes & RectifiersSchottky Diodes & Rectifiers
Brand ROHMROHM
Product Range SCS20 SeriesSCS20 Series
Diode Configuration SingleSingle
Repetitive Reverse Voltage Vrrm Max 650 V650 V
Continuous Forward Current If 8 A8 A
Total Capacitive Charge Qc 13 nC13 nC
Diode Case Style TO - 220ACTO - 220AC
No. Of Pins 2 Pin2 Pin
Junction Temperature Tj Max 175 C175 C
Automotive Qualification Standard AEC - Q101AEC - Q101
Svhc No SVHC (15 - Jan - 2018)No SVHC (15 - Jan - 2018)
Forward Current Ifav 8 A8 A
Forward Surge Current Ifsm Max 31 A31 A
Forward Voltage Vf Max 1.55 V1.55 V
Operating Temperature Max 175 C175 C
Semiconductor Technology SicSic

We are delighted to provide the SCS208AGHR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCS208AGHR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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Additional Infomation About Product

SiC Power Devices and Modules Application Note Issue of August 2014 14103EBY01 Contents 1. SiC Semiconductors .............................................................................................................................................. 3 1.1 Property of SiC material .......................................................................................................................... 3 1.2 Advantages of SiC material for power device applications......................................................... 3 2. Characteristics of SiC Schottky Barrier Diode (SBD) .............................................................................. 5 2.1 Device structure and characteristics .................................................................................................... 5 2.2 Forward characteristics of SiC-SBD ................................................................................................... 5 2.3 Reverse recovery characteristics of SiC-SBD .................................................................................. 6 3. Characteristics of SiC-MOSFET ...................................................................................................................... 8 3.1 Device structure and characteristics .................................................................................................... 8 3.2 Specific on-resistance ............................................................................................................................... 9 3.3 Vd-Id characteristics .............................................................................................................................. 10 3.4 Gate voltage Vgs to drive SiC-MOSFET and Rdson ................................................................. 10 3.5 Vg-Id characteristics .............................................................................................................................. 11 3.6 Turn-on characteristics.......................................................................................................................... 12 3.7 Turn-off characteristics ......................................................................................................................... 13 3.8 Internal gate resistance .......................................................................................................................... 14 3.9 Gate drive circuit .................................................................................................................................... 15 3.10 Forward characteristics of body diode and reverse conduction .......................................... 15 3.11 Reverse recovery characteristics of body diode ....................................................................... 17 4. Characteristics of SiC power modules ......................................................................................................... 18 4.1 Characteristics of SiC power module ............................................................................................... 18 4.2 Topologies ................................................................................................................................................. 18 4.3 Switching characteristics ...................................................................................................................... 19 4.3.1 Id and Tj dependencies of switching characteristics .......................................................... 19 4.3.2 Gate resistance dependency of switching characteristics ................................................. 20 4.3.3 Gate voltage dependency of switching characteristics ...................................................... 21 4.4 Comparison of switching loss with Si-IGBT power modules ................................................. 22 4.4.1 Comparison of total switching loss with Si-IGBT power modules ............................... 22 4.4.2 Comparison of diode reverse recovery loss (Err) with Si-IGBT power modules .... 22 4.4.3 Comparison of turn-on loss (Eon) with Si-IGBT ................................................................ 23 4.4.4 Comparison of turn-off loss (Eoff) with Si-IGBT power modules ............................... 24 5. Reliability of SiC-SBD ..................................................................................................................................... 25 5.1 dV/dt and dI/dt break-down ................................................................................................................ 25 5.2 Results of SiC-SBD reliability tests ................................................................................................. 25 6. Reliability of SiC-MOSFET ............................................................................................................................ 26 6.1 Reliability of gate insulating layer .................................................................................................... 26 1

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductormay also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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