SCS210AGHR SiC Schottky Barrier Diode Data Sheet l AEC-Q101 Qualified (1) TO-220AC V 650V R I 10A F Q 15nC C (3) (2) l l Features Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode 3) High-speed switching possible (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Tube Reel size (mm) - lConstruction Tape width (mm) - Silicon carbide epitaxial planer schottky diode Type Basic ordering unit (pcs) 50 Taping code C Marking SCS210AG lAbsolute maximum ratings (Tj = 25C) Parameter Symbol Value Unit V Reverse voltage (repetitive peak) 650 V RM V Reverse voltage (DC) 650 V R 1 I Continuous forward current A F 10* 2 A 40* 3 I Surge no repetitive forward current A 150* FSM 4 A 31* 5 Repetitive peak forward current I A FRM 41* 6 Total power disspation P W 78* D Junction temperature Tj 175 C Range of storage temperature Tstg -55 to +175 C *1 Tc=133C *2 PW=8.3ms sinusoidal, Tj=25C *3 PW=10 ms square, Tj=25C *4 PW=8.3ms sinusoidal, Tj=150C *5 Tc=100C, Tj=150C, Duty cycle=10% *6 Tc=25C www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.A 1/5Data Sheet SCS210AGHR lElectrical characteristics (Tj = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. V I =0.2mA DC blocking voltage 600 - - V DC R I =10A,Tj=25C - 1.35 1.55 V F V I =10A,Tj=150C Forward voltage - 1.55 - V F F I =10A,Tj=175C - 1.63 - V F V =600V,Tj=25C - 2 200 mA R I V =600V,Tj=150C Reverse current - 30 - mA R R V =600V,Tj=175C - 70 - mA R V =1V,f=1MHz - 365 - pF R Total capacitance C V =600V,f=1MHz - 37 - pF R Total capacitive charge Qc V =400V,di/dt=350A/ms - 15 - nC R V =400V,di/dt=350A/ms Switching time tc - 15 - ns R lThermal characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. Thermal resistance R - - 1.6 1.9 C/W th(j-c) www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.A 2/5