SCS210KE2HR SiC Schottky Barrier Diode Data Sheet l AEC-Q101 Qualified TO-247 V 1200V R I 5A/10A* F Q 17nC C *(Per leg / Both legs) (3) (2) (1) l l Features Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode 3) High-speed switching possible (2) Cathode (3) Anode (1) (2) (3) lPackaging specifications Packaging Tube Reel size (mm) - lConstruction Tape width (mm) - Silicon carbide epitaxial planer schottky diode Type Basic ordering unit (pcs) 30 Taping code C Marking SCS210KE2 lAbsolute maximum ratings (Tj = 25C) Parameter Symbol Value Unit V Reverse voltage (repetitive peak) 1200 V RM V Reverse voltage (DC) 1200 V R *7 1 I A Continuous forward current F 5/10* 2 A 23/46* *7 3 I A Surge no repetitive forward current 87/170* FSM 4 A 18/36* *7 5 I A Repetitive peak forward current FRM 24/49* *7 6 P W Total power disspation 80/170* D Junction temperature Tj 175 C Range of storage temperature Tstg -55 to +175 C *1 Tc=148C/Tc=150C *2 PW=8.3ms sinusoidal, Tj=25C *3 PW=10 ms square, Tj=25C *4 PW=8.3ms sinusoidal, Tj=150C *5 Tc=100C, Tj=150C, Duty cycle=10% *6 Tc=25C *7 Per leg / Both legs www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.A 1/5Data Sheet SCS210KE2HR lElectrical characteristics (Tj = 25C) (Per leg) Values Parameter Symbol Conditions Unit Min. Typ. Max. V I =0.1mA DC blocking voltage 1200 - - V DC R I =5A,Tj=25C - 1.4 1.6 V F V I =5A,Tj=150C Forward voltage - 1.8 - V F F I =5A,Tj=175C - 1.9 - V F V =1200V,Tj=25C - 5 100 mA R I V =1200V,Tj=150C Reverse current - 40 - mA R R V =1200V,Tj=175C - 65 - mA R V =1V,f=1MHz - 270 - pF R Total capacitance C V =800V,f=1MHz - 21 - pF R Total capacitive charge Qc V =800V,di/dt=500A/ms - 17 - nC R V =800V,di/dt=500A/ms Switching time tc - 15 - ns R lThermal characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. Per Leg - 1.5 1.8 C/W R Thermal resistance th(j-c) Both Legs - 0.75 0.86 C/W www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.A 2/5