Product Information

SCS306AMC

SCS306AMC electronic component of ROHM

Datasheet
Schottky Diodes & Rectifiers SIC SBD 650V 6A 30W TO-220FM

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.8324 ea
Line Total: USD 3.83

705 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
738 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 3.8443
10 : USD 3.0968
100 : USD 2.7646
250 : USD 2.6815
500 : USD 2.4916
1000 : USD 2.195
2000 : USD 2.1832
5000 : USD 2.1001

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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SCS306AM SiC Schottky Barrier Diode Datasheet Outline TO-220FM V 650V R I 6A F Q 19nC C Features Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode 3) High-speed switching possible (2) Anode 4) High surge current capability Packaging specifications Packaging Tube Reel size (mm) - Applications PFC Boost Topology Tape width (mm) - Type Secondary Side Rectification Basic ordering unit (pcs) 50 Data Center Packing code C PV Power Conditioners Marking SCS306AM Absolute maximum ratings (T = 25C) j Parameter Symbol Value Unit V Reverse voltage (repetitive peak) 650 V RM V Reverse voltage (DC) 650 V R Continuous forward current (T = 120C) I 6 A c F PW=10ms sinusoidal, T =25C 47 A j Surge non- PW=10ms sinusoidal, T =150C I repetitive forward 40 A j FSM current PW=10s square, T =25C 170 A j 1 I * Repetitive peak forward current 22 A FRM 2 1PW 10ms, T =25C 11 A s j 2 2 i t value i dt 2 1PW 10ms, T =150C 8.0 A s j 2 * Total power disspation P 30 W D T Junction temperature 175 C j T Range of storage temperature 55 to 175 C stg *1 T =100C, T =150C, Duty cycle=10% *2 T =25C c j c TSQ50230-SCS306AM www.rohm.com 2018 ROHM Co., Ltd. All rights reserved 1/5 15.May.2018 - Rev.001SCS306AM Datasheet Electrical characteristics (T = 25C) j Values Unit Parameter Symbol Conditions Min. Typ. Max. I =6A,T =25C - 1.35 1.50 V F j V I =6A,T =150C Forward voltage -1.44 1.71 V F F j I =6A,T =175C - 1.50 - V F j V =650V,T =25C - 0.018 30 A R j I V =650V,T =150C Reverse current - 1.2 120 A R R j V =650V,T =175C - 3.6 - A R j V =1V,f=1MHz - 300 - pF R Total capacitance C V =650V,f=1MHz - 27 - pF R Total capacitive charge Q V =400V,di/dt=350A/s - 19 - nC C R Switching time t V =400V,di/dt=350A/s - 15 -ns C R Non-repetetive E L=1mH -71- mJ ava Avaranche Energy Thermal characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. R Thermal resistance --4.2 4.9 C/W th(j-c) Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 4.19E-01 3.12E-04 th1 th1 R C 1.64E+00 K/W 1.71E-03 Ws/K th2 th2 R C 2.13E+00 3.97E-01 th3 th3 R R T th,n th1 T j c PD C C C th1 th2 th,n T a TSQ50230-SCS306AM www.rohm.com 2018 ROHM Co., Ltd. All rights reserved 2/5 15.May.2018 - Rev.001

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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