SCT2120AFC ROHM

SCT2120AFC electronic component of ROHM
SCT2120AFC ROHM
SCT2120AFC MOSFETs
SCT2120AFC  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SCT2120AFC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT2120AFC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SCT2120AFC
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 650 V 29A (Tc) 165W (Tc) Through Hole TO-220AB
Datasheet: SCT2120AFC Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 23.814
10$ 21.0997
N/A

Obsolete

Availability 0
MOQ : 30
Multiples : 30
QtyUnit Price
30$ 9.0739
90$ 8.7109
120$ 8.7109
300$ 8.7109
450$ 8.7109
N/A

Obsolete

Availability 0
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 8.9001
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 14.6025
10$ 12.8844
100$ 10.8864
500$ 9.666
1000$ 9.0828
N/A

Obsolete

Availability 0
MOQ : 4
Multiples : 1
QtyUnit Price
4$ 11.0683
10$ 8.7313
50$ 8.0106
100$ 7.5841
N/A

Obsolete

Availability 0
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 16.5774
10$ 13.461
25$ 13.0008
100$ 11.4758
500$ 11.2938
N/A

Obsolete

Availability 0
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 14.6916
10$ 11.893
25$ 11.4865
100$ 10.5446
500$ 10.3774
N/A

Obsolete

Availability 0
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 16.5774
10$ 13.461
25$ 13.0008
100$ 11.4758
500$ 11.2938
N/A

Obsolete

Availability 0
MOQ : 3
Multiples : 1
QtyUnit Price
3$ 14.6916
10$ 11.893
25$ 11.4865
100$ 10.5446
500$ 10.3774
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT2120AFC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT2120AFC and other electronic components in the MOSFETs category and beyond.

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SCT2120AF Datasheet N-channel SiC power MOSFET lOutline TO220AB V 650V DSS R (Typ.) 120m DS(on) I 29A D P 165W D (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance (1) Gate 2) Fast switching speed (2) Drain 3) Fast reverse recovery (3) Source 4) Easy to parallel *1 Body Diode 5) Simple to drive 6) Pb-free lead plating RoHS compliant lPackaging specifications Packing Tube Reel size (mm) - lApplication Tape width (mm) - Solar inverters Type Basic ordering unit (pcs) 50 DC/DC converters Packing code C Switch mode power supplies Marking SCT2120AF Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 650 V DSS *1 T = 25C I 29 A c D Continuous drain current *1 T = 100C 20 A I c D *2 Pulsed drain current I 72 A D,pulse Gate - Source voltage (DC) V V -6 to 22 GSS *3 Gate - Source surge voltage (t 300nsec) V -10 to 26 V surge GSS-surge Power dissipation (T = 25C) P 165 W c D Junction temperature T 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50222-SCT2120AF 2019 ROHM Co., Ltd. All rights reserved. 1/12 22.Feb.2019 - Rev.003 TSZ2211114001Datasheet SCT2120AF lElectrical characteristics (T = 25 C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 650 - - V (BR)DSS GS D voltage V = 650V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 A DSS j drain current T = 150C - 2 - j I Gate - Source leakage current V = +22V, V = 0V - - 100 nA GSS+ GS DS I V = -6V, V = 0V Gate - Source leakage current - - -100 nA GSS- GS DS Gate threshold voltage V V = V , I = 3.3mA 1.6 2.8 4.0 V GS (th) DS GS D lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.70 0.91 C/W thJC T Soldering temperature, wavesoldering for 10s - - 265 C sold lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 9.61E-02 1.55E-03 th1 th1 R C 4.04E-01 K/W 5.23E-03 Ws/K th2 th2 R C 1.96E-01 8.33E-02 th3 th3 www.rohm.com TSQ50222-SCT2120AF 2019 ROHM Co., Ltd. All rights reserved. 2/12 22.Feb.2019 - Rev.003 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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