SCT2H12NY N-channel SiC power MOSFET Datasheet Outline (2) TO-268-2L V 1700V DSS R (Typ.) 1.15 DS(on) I 4A D P 44W D (1) (3) Features Inner circuit (2) 1) Low on-resistance (1) Gate 2) Fast switching speed (2) Drain *1 3) Long creepage distance with no center lead (3) Source (1) 4) Simple to drive *1 Body Diode 5) Pb-free lead plating RoHS compliant (3) Packaging specifications Embossed tape Packing Reel size (mm) 330 Application Tape width (mm) 24 Auxilialy power supplies Type Basic ordering unit (pcs) 400 Switch mode power supplies Taping code TB Marking SCT2H12NY Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 1700 V DSS *1 T = 25C 4A I c D Continuous drain current *1 T = 100C I 2.9 A c D *2 Pulsed drain current I 10 A D,pulse V Gate - Source voltage (DC) V 6 to 22 GSS *3 Gate - Source surge voltage (t <300nsec) V 10 to 26 V surge GSS surge Power dissipation (T = 25C) P 44 W c D T Junction temperature 175 C j T Range of storage temperature 55 to 175 C stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 1/12Datasheet SCT2H12NY Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 2.65 3.45 C/W thJC Electrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 1700 - - V (BR)DSS GS D voltage V = 1700V, V = 0V DS GS Zero gate voltage I T = 25C - 0.1 10 A DSS j drain current T = 150C -0.2 - j Gate - Source leakage current I V = 22V, V = 0V - - 100 nA GSS GS DS Gate - Source leakage current I V = 6V, V = 0V -- 100 nA GSS GS DS Gate threshold voltage V V = V , I = 0.41mA 1.6 2.8 4.0 V GS (th) DS GS D *1 Limited only by maximum temperature allowed. *2 PW 10s, Duty cycle 1% *3 Example of acceptable Vgs waveform *4 Pulsed www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 2/12