Product Information

SCT3030ALGC11

SCT3030ALGC11 electronic component of ROHM

Datasheet
MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 30.7306 ea
Line Total: USD 30.73

307 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
151 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 31.6204
10 : USD 31.5255
25 : USD 26.9219
50 : USD 26.8981
100 : USD 25.676
250 : USD 25.5811
450 : USD 25.5573
900 : USD 25.5455

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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SCT3030AL N-channel SiC power MOSFET Datasheet lOutline TO-247N V 650V DSS R (Typ.) 30m W DS(on) I 70A D (3) P 262W (2) D (1) lInner circuit lFeatures (1) Gate 1) Low on-resistance (2) Drain 2) Fast switching speed (3) Source 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel 5) Simple to drive lPackaging specifications 6) Pb-free lead plating RoHS compliant Packing Tube Reel size (mm) - Tape width (mm) - lApplication Type Basic ordering unit (pcs) 30 Solar inverters Taping code C11 DC/DC converters Marking SCT3030AL Switch mode power supplies Induction heating Motor drives lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 650 V DSS *1 T = 25C 70 A I c D Continuous drain current *1 T = 100C I 49 A c D *2 Pulsed drain current I 175 A D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate-Source Surge Voltage (t < 300nsec) V -4 to +26 V surge GSS surge *4 Recommended Drive Voltage 0 / +18 V V GS op Junction temperature T 175 C j Range of storage temperature T C -55 to +175 stg www.rohm.com TSQ50211-SCT3030AL 2018 ROHM Co., Ltd. All rights reserved. 1/12 14.Jun.2018 - Rev.005 TSZ2211114001SCT3030AL Datasheet lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.44 0.57 C/W thJC lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 650 - - V (BR)DSS GS D voltage V = 650V, V = 0V DS GS Zero gate voltage I T = 25C - 1 10 mA DSS j drain current T = 150C - 2 - j I Gate - Source leakage current V = +22V, V = 0V - - 100 nA GSS + GS DS Gate - Source leakage current I V = -4V, V = 0V - - -100 nA GSS - GS DS V V = 10V, I = 13.3mA Gate threshold voltage 2.7 - 5.6 V GS (th) DS D V = 18V, I = 27A GS D Static drain - source *5 T = 25C - 30 39 R m W j DS(on) on - state resistance T = 125C - 39.6 - j Gate input resistance R f = 1MHz, open drain - 7 - W G www.rohm.com TSQ50211-SCT3030AL 2018 ROHM Co., Ltd. All rights reserved. 2/12 14.Jun.2018 - Rev.005 TSZ2211115001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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