Product Information

SCT3080ALHRC11

SCT3080ALHRC11 electronic component of ROHM

Datasheet
N-Channel 650 V 30A (Tc) 134W Through Hole TO-247N

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 14.7701 ea
Line Total: USD 44.31

388 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
378 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 21.1673
10 : USD 19.3994
25 : USD 16.0891
50 : USD 16.006
100 : USD 15.7568
250 : USD 15.6856
450 : USD 15.4127
900 : USD 14.7483
2700 : USD 14.1788

388 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3
Multiples : 1
3 : USD 14.7701
5 : USD 12.9555
10 : USD 12.5609
50 : USD 11.6457
100 : USD 11.1892

428 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 5
Multiples : 1
5 : USD 17.6283
10 : USD 17.258
20 : USD 16.9362
50 : USD 16.5976

436 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 5
Multiples : 1
5 : USD 17.6283
10 : USD 17.258
20 : USD 16.9362
50 : USD 16.5976

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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SCT3080ALHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline TO-247N V 650V DSS R (Typ.) 80m DS(on) *1 30A I D P (3) 134W (2) D (1) lInner circuit lFeatures (1) Gate 1) Qualified to AEC-Q101 (2) Drain (3) Source 2) Low on-resistance *Body Diode 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are 5) Easy to parallel not exchangeable. Their exchange might lead to malfunction. 6) Simple to drive 7) Pb-free lead plating RoHS compliant lPackaging specifications Tube Packing lApplication Automobile Reel size (mm) - Switch mode power supplies Tape width (mm) - Type Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3080AL lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source Voltage V 650 V DSS *1 T = 25C I 30 A c D Continuous Drain current *1 T = 100C I 21 A c D *2 Pulsed Drain current I 75 A D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate - Source surge voltage (t < 300nsec) -4 to +26 V V surge GSS surge *4 Recommended drive voltage V 0 / +18 V GS op T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50211-SCT3080ALHR 2018 ROHM Co., Ltd. All rights reserved. 1/12 16.Nov.2018 - Rev.001 TSZ22111 14001SCT3080ALHR Datasheet lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V = 0V, I = 1mA GS D Drain - Source breakdown V T = 25C 650 - - V (BR)DSS j voltage T = -55C 650 - - j V = 0V, V =650V GS DS Zero Gate voltage I T = 25C - 1 10 A DSS j Drain current T = 150C - 2 - j I V = , V = 0V Gate - Source leakage current +22V - - 100 nA GSS+ GS DS Gate - Source leakage current I V = -4V , V = 0V - - -100 nA GSS- GS DS V V = 10V, I = Gate threshold voltage 5mA 2.7 - 5.6 V GS (th) DS D V = 18V, I = 10A GS D Static Drain - Source *5 T = 25C R - 80 104 m j DS(on) on - state resistance T = 150C - 115 - j Gate input resistance R f = 1MHz, open drain - 13 - G lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.86 1.12 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 1.17E-01 6.82E-04 th1 th1 R C 7.29E-01 K/W 5.28E-03 Ws/K th2 th2 R C 1.30E-02 6.78E-01 th3 th3 R R T th,n T th1 j c P C C D C th1 th2 th,n T a www.rohm.com TSQ50211-SCT3080ALHR 2018 ROHM Co., Ltd. All rights reserved. 2/12 16.Nov.2018 - Rev.001 TSZ22111 15001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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ROHM Semiconductor

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