SCT3120AL

SiC Power Devices and Modules Application Note Issue of August 2014 14103EBY01 Contents 1. SiC Semiconductors .............................................................................................................................................. 3 1.1 Property of SiC material .......................................................................................................................... 3 1.2 Advantages of SiC material for power device applications......................................................... 3 2. Characteristics of SiC Schottky Barrier Diode (SBD) .............................................................................. 5 2.1 Device structure and characteristics .................................................................................................... 5 2.2 Forward characteristics of SiC-SBD ................................................................................................... 5 2.3 Reverse recovery characteristics of SiC-SBD .................................................................................. 6 3. Characteristics of SiC-MOSFET ...................................................................................................................... 8 3.1 Device structure and characteristics .................................................................................................... 8 3.2 Specific on-resistance ............................................................................................................................... 9 3.3 Vd-Id characteristics .............................................................................................................................. 10 3.4 Gate voltage Vgs to drive SiC-MOSFET and Rdson ................................................................. 10 3.5 Vg-Id characteristics .............................................................................................................................. 11 3.6 Turn-on characteristics.......................................................................................................................... 12 3.7 Turn-off characteristics ......................................................................................................................... 13 3.8 Internal gate resistance .......................................................................................................................... 14 3.9 Gate drive circuit .................................................................................................................................... 15 3.10 Forward characteristics of body diode and reverse conduction .......................................... 15 3.11 Reverse recovery characteristics of body diode ....................................................................... 17 4. Characteristics of SiC power modules ......................................................................................................... 18 4.1 Characteristics of SiC power module ............................................................................................... 18 4.2 Topologies ................................................................................................................................................. 18 4.3 Switching characteristics ...................................................................................................................... 19 4.3.1 Id and Tj dependencies of switching characteristics .......................................................... 19 4.3.2 Gate resistance dependency of switching characteristics ................................................. 20 4.3.3 Gate voltage dependency of switching characteristics ...................................................... 21 4.4 Comparison of switching loss with Si-IGBT power modules ................................................. 22 4.4.1 Comparison of total switching loss with Si-IGBT power modules ............................... 22 4.4.2 Comparison of diode reverse recovery loss (Err) with Si-IGBT power modules .... 22 4.4.3 Comparison of turn-on loss (Eon) with Si-IGBT ................................................................ 23 4.4.4 Comparison of turn-off loss (Eoff) with Si-IGBT power modules ............................... 24 5. Reliability of SiC-SBD ..................................................................................................................................... 25 5.1 dV/dt and dI/dt break-down ................................................................................................................ 25 5.2 Results of SiC-SBD reliability tests ................................................................................................. 25 6. Reliability of SiC-MOSFET ............................................................................................................................ 26 6.1 Reliability of gate insulating layer .................................................................................................... 26 1