X-On Electronics has gained recognition as a prominent supplier of SCT3120AL MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3120AL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SCT3120AL ROHM

Name: SCT3120AL
Brand: ROHM
SKU: SCT3120AL_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	SCT3120AL
Manufacturer:	ROHM
Category:	MOSFETs
Description:	MOSFET, N-CH, 650V, 21A, TO-247N
Datasheet:	SCT3120AL Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 9.7535 ea
Line Total: USD 9.75

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

SCT3120AL More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 09 May to Thu. 15 May MOQ : 1 Multiples : 1	1 : USD 9.7535

Specifications

Manufacturer ROHM ROHM
Product Category MOSFETs MOSFETs
Transistor Polarity N Channel N Channel
Brand ROHM ROHM
Continuous Drain Current Id 21 A 21 A
Drain Source Voltage Vds 650 V 650 V
On Resistance Rdson 0.12 Ohms 0.12 Ohms
Rdson Test Voltage Vgs 18 V 18 V
Threshold Voltage Vgs 5.6 V 5.6 V
Power Dissipation Pd 103 W 103 W
Transistor Case Style TO - 247N TO - 247N
No. Of Pins 3Pins 3Pins
Operating Temperature Max 175 C 175 C
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (15 - Jan - 2018) No SVHC (15 - Jan - 2018)

We are delighted to provide the SCT3120AL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3120AL and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

SiC Power Devices and Modules Application Note Issue of August 2014 14103EBY01 Contents 1. SiC Semiconductors .............................................................................................................................................. 3 1.1 Property of SiC material .......................................................................................................................... 3 1.2 Advantages of SiC material for power device applications......................................................... 3 2. Characteristics of SiC Schottky Barrier Diode (SBD) .............................................................................. 5 2.1 Device structure and characteristics .................................................................................................... 5 2.2 Forward characteristics of SiC-SBD ................................................................................................... 5 2.3 Reverse recovery characteristics of SiC-SBD .................................................................................. 6 3. Characteristics of SiC-MOSFET ...................................................................................................................... 8 3.1 Device structure and characteristics .................................................................................................... 8 3.2 Specific on-resistance ............................................................................................................................... 9 3.3 Vd-Id characteristics .............................................................................................................................. 10 3.4 Gate voltage Vgs to drive SiC-MOSFET and Rdson ................................................................. 10 3.5 Vg-Id characteristics .............................................................................................................................. 11 3.6 Turn-on characteristics.......................................................................................................................... 12 3.7 Turn-off characteristics ......................................................................................................................... 13 3.8 Internal gate resistance .......................................................................................................................... 14 3.9 Gate drive circuit .................................................................................................................................... 15 3.10 Forward characteristics of body diode and reverse conduction .......................................... 15 3.11 Reverse recovery characteristics of body diode ....................................................................... 17 4. Characteristics of SiC power modules ......................................................................................................... 18 4.1 Characteristics of SiC power module ............................................................................................... 18 4.2 Topologies ................................................................................................................................................. 18 4.3 Switching characteristics ...................................................................................................................... 19 4.3.1 Id and Tj dependencies of switching characteristics .......................................................... 19 4.3.2 Gate resistance dependency of switching characteristics ................................................. 20 4.3.3 Gate voltage dependency of switching characteristics ...................................................... 21 4.4 Comparison of switching loss with Si-IGBT power modules ................................................. 22 4.4.1 Comparison of total switching loss with Si-IGBT power modules ............................... 22 4.4.2 Comparison of diode reverse recovery loss (Err) with Si-IGBT power modules .... 22 4.4.3 Comparison of turn-on loss (Eon) with Si-IGBT ................................................................ 23 4.4.4 Comparison of turn-off loss (Eoff) with Si-IGBT power modules ............................... 24 5. Reliability of SiC-SBD ..................................................................................................................................... 25 5.1 dV/dt and dI/dt break-down ................................................................................................................ 25 5.2 Results of SiC-SBD reliability tests ................................................................................................. 25 6. Reliability of SiC-MOSFET ............................................................................................................................ 26 6.1 Reliability of gate insulating layer .................................................................................................... 26 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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