X-On Electronics has gained recognition as a prominent supplier of SCT3160KLGC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3160KLGC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3160KLGC11 ROHM

Name: SCT3160KLGC11
Brand: ROHM
SKU: SCT3160KLGC11_ROHM
Availability: InStock
Rating: 5 (11 reviews)

SCT3160KLGC11 electronic component of ROHM

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See Product Specifications

Part No.	SCT3160KLGC11
Manufacturer:	ROHM
Category:	SiC MOSFETs
Description:	SiC MOSFETs N-Ch 1200V SiC 17A 160mOhm TrenchMOS
Datasheet:	SCT3160KLGC11 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 10.2436 ea
Line Total: USD 10.24

Availability - 129
Ship by Thu. 22 May to Tue. 27 May

MOQ: 1 Multiples: 1
Pack Size: 1

SCT3160KLGC11 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

129

Ship by Thu. 22 May to Tue. 27 May

MOQ : 1
Multiples : 1

1 : USD 10.2436
10 : USD 6.0309
30 : USD 4.9658
90 : USD 4.4343
510 : USD 4.1905
990 : USD 4.0787

3815

Ship by Tue. 13 May to Thu. 15 May

MOQ : 1
Multiples : 1

1 : USD 6.825
10 : USD 6.006
25 : USD 5.775
450 : USD 5.764

23

Ship by Tue. 13 May to Thu. 15 May

MOQ : 1
Multiples : 1

1 : USD 22.456
2 : USD 15.442
4 : USD 14.602

Specifications

Manufacturer

ROHM ROHM

Product Category

SiC MOSFETs SiC MOSFETs

RoHS - XON

Y Y

Mounting Style

Through Hole Through Hole

Transistor Polarity

N - Channel N - Channel

Number of Channels

1 Channel 1 Channel

Vds - Drain-Source Breakdown Voltage

1200 V 1200 V

Id - Continuous Drain Current

17 A 17 A

Rds On - Drain-Source Resistance

160 mOhms 160 mOhms

Vgs - Gate-Source Voltage

- 4 v , 22 V - 4 v , 22 V

Vgs th - Gate-Source Threshold Voltage

2.7 V 2.7 V

Qg - Gate Charge

42 nC 42 nC

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

103 W 103 W

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Package / Case

TO - 247 - 3 TO - 247 - 3

Packaging

Tube Tube

Series

Sct3x Sct3x

Technology

Sic Sic

Transistor Type

1 N - Channel 1 N - Channel

Brand

Rohm Semiconductor Rohm Semiconductor

Forward Transconductance - Min

2.5 S 2.5 S

Fall Time

25 ns 25 ns

Product Type

Mosfet Mosfet

Rise Time

18 ns 18 ns

Factory Pack Quantity :

450 450

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

24 ns 24 ns

Typical Turn-On Delay Time

14 ns 14 ns

Category

Mosfet Mosfet

Brand Category

ROHM ROHM

Notes:- Show Stocked Products With Similar Attributes.

SCT3160KLGC11 Alternative Parts

We are delighted to provide the SCT3160KLGC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3160KLGC11 and other electronic components in the SiC MOSFETs category and beyond.

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Additional Infomation About Product

The SCT3160KLGC11 is an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by ROHM. This transistor is a SiC (Silicon Carbide) device with a breakdown voltage of 1200 V and a continuous drain current capability of 17 A. This device has a low on-state resistance of 160 mOhm and utilizes an advanced trenchMOS technology for high-speed switching. It is designed to offer superior switching characteristics and improve reliability in power supplies, automotive, and industrial applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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Availability	Price	Buy Price	Quantity
129 Ship by Thu. 22 May to Tue. 27 May MOQ : 1 Multiples : 1	1 : USD 10.2436 10 : USD 6.0309 30 : USD 4.9658 90 : USD 4.4343 510 : USD 4.1905 990 : USD 4.0787

3815 Ship by Tue. 13 May to Thu. 15 May MOQ : 1 Multiples : 1	1 : USD 6.825 10 : USD 6.006 25 : USD 5.775 450 : USD 5.764

23 Ship by Tue. 13 May to Thu. 15 May MOQ : 1 Multiples : 1	1 : USD 22.456 2 : USD 15.442 4 : USD 14.602

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