X-On Electronics has gained recognition as a prominent supplier of SCT3120ALHRC11 mosfet across the USA, India, Europe, Australia, and various other global locations. SCT3120ALHRC11 mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SCT3120ALHRC11 ROHM

SCT3120ALHRC11 electronic component of ROHM
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See Product Specifications
Part No.SCT3120ALHRC11
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET 650V 21A 103W SIC 120mOhm TO-247N
Datasheet: SCT3120ALHRC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.89 ea
Line Total: USD 9.89

Availability - 813
Ships to you between
Tue. 11 Jun to Thu. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
813 - WHS 1


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 9.89
10 : USD 8.625
25 : USD 6.7505
100 : USD 6.4975
250 : USD 6.4745
450 : USD 6.0605
900 : USD 6.049
5400 : USD 5.9455

436 - WHS 2


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 7
Multiples : 1
7 : USD 15.211
25 : USD 14.5086
50 : USD 13.9248
100 : USD 13.4339
250 : USD 13.0172

436 - WHS 3


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 7
Multiples : 1
7 : USD 15.211
25 : USD 14.5086
50 : USD 13.9248
100 : USD 13.4339
250 : USD 13.0172

436 - WHS 4


Ships to you between Wed. 05 Jun to Tue. 11 Jun

MOQ : 3
Multiples : 1
3 : USD 15.1775
10 : USD 11.245
50 : USD 10.4812
100 : USD 9.3112
200 : USD 8.6937

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SCT3120ALHRC11 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3120ALHRC11 and other electronic components in the MOSFET category and beyond.

SCT3120ALHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline TO-247N V 650V DSS R (Typ.) 120m DS(on) *1 21A I D P 103W (3) D (2) (1) lInner circuit lFeatures (1) Gate 1) Qualified to AEC-Q101 (2) Drain (3) Source 2) Low on-resistance *Body Diode 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are 5) Easy to parallel not exchangeable. Their exchange might lead to malfunction. 6) Simple to drive 7) Pb-free lead plating RoHS compliant lPackaging specifications Tube Packing lApplication Automobile Reel size (mm) - Switch mode power supplies Tape width (mm) - Type Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3120AL lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source Voltage V 650 V DSS *1 T = 25C I 21 A c D Continuous Drain current *1 T = 100C I 15 A c D *2 Pulsed Drain current I 52 A D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate - Source surge voltage (t < 300nsec) -4 to +26 V V surge GSS surge *4 Recommended drive voltage V 0 / +18 V GS op T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50211-SCT3120ALHR 2018 ROHM Co., Ltd. All rights reserved. 1/12 16.Nov.2018 - Rev.001 TSZ22111 14001 Not Recommended for New DesignsSCT3120ALHR Datasheet lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V = 0V, I = 1mA GS D Drain - Source breakdown V T = 25C 650 - - V (BR)DSS j voltage T = -55C 650 - - j V = 0V, V =650V GS DS Zero Gate voltage I T = 25C - 1 10 A DSS j Drain current T = 150C - 2 - j I V = , V = 0V Gate - Source leakage current +22V - - 100 nA GSS+ GS DS Gate - Source leakage current I V = -4V , V = 0V - - -100 nA GSS- GS DS V V = 10V, I = Gate threshold voltage 3.33mA 2.7 - 5.6 V GS (th) DS D V = 18V, I = 6.7A GS D Static Drain - Source *5 T = 25C R - 120 156 m j DS(on) on - state resistance T = 150C - 172 - j Gate input resistance R f = 1MHz, open drain - 18 - G lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 1.12 1.46 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 1.11E-01 8.73E-04 th1 th1 R C 7.09E-01 K/W 5.10E-03 Ws/K th2 th2 R C 3.01E-01 2.94E-02 th3 th3 R R T th,n T th1 j c P C C D C th1 th2 th,n T a www.rohm.com TSQ50211-SCT3120ALHR 2018 ROHM Co., Ltd. All rights reserved. 2/12 16.Nov.2018 - Rev.001 TSZ22111 15001 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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