SH8J62TB1 ROHM

4V Drive Pch+Pch MOSFET SH8J62 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET SOP8 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 SH8J62 2 2 (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE Absolute maximum ratings (Ta=25C) <It is the same ratings for the Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS Gate-source voltage VGSS 20 V Continuous ID 4.5 A Drain current 1 Pulsed I 18 A DP Continuous IS 1.6 A Source current 1 (Body diode) Pulsed ISP 18 A 2.0 W / TOTAL 2 Total power dissipation PD 1.4 W / ELEMENT Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board www.rohm.com 2010.01 - Rev.A 1/5 c 2010 ROHM Co., Ltd. All rights reserved. SH8J62 Data Sheet Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V(BR) DSS 30 VID= 1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage V 1.0 2.5 V V = 10V, I = 1mA GS (th) DS D 40 56 m ID= 4.5A, VGS= 10V Static drain-source on-state RDS (on) 55 77 m ID= 2.5A, VGS= 4.5V resistance 60 84 m I = 2.5A, V = 4.0V D GS Forward transfer admittance Yfs 3.5 SVDS= 10V, ID= 4.5A Input capacitance Ciss 800 pF VDS= 10V Output capacitance C 120 pF V =0V oss GS Reverse transfer capacitance Crss 110 pF f=1MHz Turn-on delay time td (on) 7 ns ID= 2.5A VDD 15V t Rise time r 15 ns VGS= 10V Turn-off delay time td (off) 70 ns RL=6.0 Fall time tf 50 ns RG=10 VDD 15V Total gate charge Qg 8.0 nC ID= 4.5A Gate-source charge Qgs 2.5 nC VGS= 5V Gate-drain charge Qgd3.0 nC RL=3.3 / RG=10 Pulsed Body diode characteristics (Source-Drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 4.5A, VGS=0V Pulsed www.rohm.com 2010.01 - Rev.A 2/5 c 2010 ROHM Co., Ltd. All rights reserved.