X-On Electronics has gained recognition as a prominent supplier of SH8J66TB1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SH8J66TB1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SH8J66TB1 ROHM

SH8J66TB1 electronic component of ROHM
SH8J66TB1 ROHM
SH8J66TB1 MOSFETs
SH8J66TB1  Semiconductors

Images are for reference only
See Product Specifications
Part No. SH8J66TB1
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Pch+Pch -30V -9A MOSFET
Datasheet: SH8J66TB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
189: USD 1.3814 ea
Line Total: USD 261.08 
Availability - 1555
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ: 189  Multiples: 1
Pack Size: 1
Availability Price Quantity
2425
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 1.4

97
Ship by Mon. 23 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 5.8986
10 : USD 3.7908
30 : USD 3.6772
100 : USD 3.5617
500 : USD 3.5104
1000 : USD 3.4848

1555
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 189
Multiples : 1
189 : USD 1.3814

737
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 78
Multiples : 1
78 : USD 3.367
111 : USD 2.353
120 : USD 2.184
200 : USD 1.664
500 : USD 1.5

2422
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 189
Multiples : 1
189 : USD 1.3814

2425
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 1.7175

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SH8J66TB1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8J66TB1 and other electronic components in the MOSFETs category and beyond.

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SH8J66 Datasheet -30V Pch +Pch Power MOSFET llOutline V -30V DSS R (Max.) 18.5m DS(on) SOP8 I 9.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package (SOP8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB Marking SH8J66 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 9.0 A D *1 I Pulsed drain current 36 A DP Gate - Source voltage V 20 V GSS *2 P 2.0 D Power dissipation (total) W *3 P 1.4 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. SH8J66 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 20V, V = 0V - - 10 A GSS GS DS leakage current Gate threshold V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T j referenced to 25 V = -10V, I = -9.0A - 13.5 18.5 GS D Static drain - source *4 R V = -4.5V, I = -4.5A - 17.5 23.6 m DS(on) GS D on - state resistance V = -4.0V, I = -4.5A - 19.0 24.7 GS D R Gate resistance f = 1MHz, open drain - 4.9 - G Forward Transfer *4 Y V = -10V, I = -9A 11 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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