Data Sheet 4V Drive Nch + Pch MOSFET SH8M14 Structure Dimensions (Unit : mm) SOP8 Silicon N-channel MOSFET/ Silicon P-channel MOSFET (8) (5) Features 1) Low on-resistance. 2) High power package(SOP8). (1) (4) 3) Low voltage drive(4V drive). Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (pieces) 2500 SH8M14 2 2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source 1 1 (4) Tr2 Gate Absolute maximum ratings (Ta = 25C) (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain Limits (7) Tr1 Drain Parameter Symbol Unit 1 ESD PROTECTION DIODE Tr1 : N-ch Tr2 : P-ch (8) Tr1 Drain 2 BODY DIODE Drain-source voltage V 30 30 V DSS Gate-source voltage V 20 20 V GSS Continuous I 9 7A D Drain current *1 Pulsed I 36 28 A DP Continuous I 1.6 1.6 A Source current s *1 (Body Diode) Pulsed I 36 28 A sp *2 2.0 W / TOTAL Power dissipation P D 1.4 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10 s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/10Data Sheet SH8M14 Electrical characteristics (Ta = 25 C) <Tr1(Nch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -15 21 I =9A, V =10V D GS Static drain-source on-state * R -18 25 m I =9A, V =4.5V DS (on) D GS resistance 20 28 I =9A, V =4V D GS Forward transfer admittance l Y l 5.0 - - S V =10V, I =9A * fs DS D Input capacitance C - 630 - pF V =10V iss DS Output capacitance C - 230 - pF V =0V oss GS Reverse transfer capacitance C - 110 - pF f=1MHz rss Turn-on delay time t - 10 - ns I =4.5A, V 15V * d(on) D DD Rise time t - 33 - ns V =10V * r GS Turn-off delay time t * - 42 - ns R =3.3 d(off) L Fall time t - 10 - ns R =10 * f G Total gate charge Q - 8.5 - nC I =9A, V 15V * g D DD Gate-source charge Q - 2.3 - nC V =5V * gs GS Gate-drain charge Q - 4.0 - nC gd * *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =9A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.06 - Rev.A