UM6K33NTN ROHM

UM6K33NTN electronic component of ROHM
UM6K33NTN ROHM
UM6K33NTN MOSFETs
UM6K33NTN Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of UM6K33NTN MOSFETs across the USA, India, Europe, Australia, and various other global locations. UM6K33NTN MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. UM6K33NTN
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: UM6K33NTN Datasheet (PDF)
Price (USD)
1: USD 0.4095 ea
Line Total: USD 0.41 
Availability : 25664
  
Ship by Fri. 03 Oct to Tue. 07 Oct
QtyUnit Price
1$ 0.4095
10$ 0.2544
100$ 0.1535
500$ 0.1066
1000$ 0.0927
3000$ 0.0714
6000$ 0.065
9000$ 0.0597

 UM6K33NTN More Buying Options & Price Grid(s)
Availability 1687
Ship by Tue. 07 Oct to Mon. 13 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2218
50$ 0.1744
150$ 0.1128
500$ 0.0895
3000$ 0.0759
6000$ 0.071

Availability 25664
Ship by Fri. 03 Oct to Tue. 07 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4095
10$ 0.2544
100$ 0.1535
500$ 0.1066
1000$ 0.0927
3000$ 0.0714
6000$ 0.065
9000$ 0.0597

Availability 2456
Ship by Tue. 07 Oct to Mon. 13 Oct
MOQ : 851
Multiples : 1
QtyUnit Price
851$ 0.2962
883$ 0.2855
1000$ 0.2762
2500$ 0.2578

Availability 38133
Ship by Tue. 07 Oct to Mon. 13 Oct
MOQ : 948
Multiples : 1
QtyUnit Price
948$ 0.2659
967$ 0.2608
1000$ 0.2583
2000$ 0.2435
5000$ 0.2302

Availability 2910
Ship by Tue. 07 Oct to Mon. 13 Oct
MOQ : 851
Multiples : 1
QtyUnit Price
851$ 0.2962
883$ 0.2855
1000$ 0.2762
2500$ 0.2578

Specifications

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Operating Temp Range
Mounting
Package Type
Continuous Drain Current
Drain-Source On-Volt
Operating Temperature Classification
Gate-Source Voltage Max
Type
Number Of Elements
Pin Count
Rad Hardened
Polarity
Power Dissipation
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UM6K33NTN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UM6K33NTN and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

SemiconductorThe Electronic part UM6K33NTN is a MOSFET manufactured by ROHM Semiconductor. It is an N-Channel, Enhancement Mode Power Field Effect Transistor which supports a drain-source voltage ranging from 30V to 100V. The part has an on-resistance of 6.3 m? max and a VGS(th) of 3.5V~5V, making it suitable for switching applications in a variety of voltages. The product features ROHM's unique Gate Charge Control Gate Structure, which provides low gate noise, low on-resistance and excellent switching characteristics.The part also features a high-speed switching for high frequency applications. Its high withstand voltage rating ensures better device reliability and longer life. It also has a low internal gate resistance providing improvement in response time. In addition, the package has good thermal characteristics enabling high-density mounting.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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