Product Information

TSA24N50M

TSA24N50M electronic component of Truesemi

Datasheet
MOSFET N Trench 500V 24A (Tc) 4V @ 250uA 200 mΩ @ 12A,10V TO-3P RoHS
Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0727 ea
Line Total: USD 2.07

606 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
606 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

TSA24N50M
Truesemi

1 : USD 2.107
10 : USD 1.8511
30 : USD 1.7122
90 : USD 1.553
450 : USD 1.4826
900 : USD 1.4503

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The Truesemi TSA24N50M MOSFET is a N-channel trench gate field-effect transistor. This device is an enhancement-mode, insulated-gate field-effect transistor with an optimized tolerance for high DC current transfer ratio (DCR) and fast switching speeds. It has a breakdown voltage of 500V, drain to source current up to 24A, and Gate threshold voltage of 4V. It has a maximum Gate source resistance of 200 mO at 12A when the drain source voltage is 10V and a maximum Gate source current of 250µA. The TSA24N50M is supplied in a TO-3P RoHS compliant package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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