Product Information

TSF16N50MR

TSF16N50MR electronic component of Truesemi

Datasheet
MOSFET N Trench 500V 16A (Tc) 4V @ 250uA 400 mΩ @ 8A,10V TO-220F RoHS
Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7661 ea
Line Total: USD 0.77

177 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
138 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

TSF16N50MR
Truesemi

1 : USD 0.795
10 : USD 0.6688
50 : USD 0.5701
100 : USD 0.5071
500 : USD 0.4695
1000 : USD 0.4518

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

:The TSF16N50MR MOSFET N Trench 500V 16A (Tc) 4V @ 250uA 400 m? @ 8A,10V TO-220F RoHS manufactured by Truesemi is a robust and reliable high-performance MOSFET. It features a maximum avalanche energy of 4V @ 250µA, a drain-to-source voltage of 500V, a current rating of 16A (Tc) 400m? @ 8A, and a maximum temperature of 10°C at its continuous 10V TO-220F RoHS package. This MOSFET is suitable for a variety of low- to high-power applications, including load switch, audio amplifiers, motor drivers, and IGBT gate drivers. Its rugged construction and superior thermal properties make it especially suitable for harsh, high-temperature environments.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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