DFA100BA160 Sanrex

DFA100BA160 electronic component of Sanrex
DFA100BA160 Sanrex
DFA100BA160 Discrete Semiconductor Modules
DFA100BA160  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of DFA100BA160 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DFA100BA160 Discrete Semiconductor Modules are a product manufactured by Sanrex. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No. DFA100BA160
Manufacturer: Sanrex
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Discrete Semiconductor Modules 1600V 100A Bridge Rectifiers
Datasheet: DFA100BA160 Datasheet (PDF)
Price (USD)
1: USD 62.964 ea
Line Total: USD 62.96 
Availability : 0
  
QtyUnit Price
1$ 62.964
10$ 51.612

Availability 0
Ship by Tue. 09 Sep to Thu. 11 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 62.964
10$ 51.612

   
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Vf - Forward Voltage
Vr - Reverse Voltage
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We are delighted to provide the DFA100BA160 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DFA100BA160 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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THREE PHASE DIODE THYRISTOR DFA100BA80/160 SanRex Power Module, DFA100BA, is complex isolated module which is designed for rash current circuit. It contains six diodes connected in a three phase bridge configuration, and a thyristor connected to a direct current line. This Module is designed very compactly. Because diode module and thyristor put together. This Module is also isolated type between electorode terminal and mounting base. So you can put this Module and other one together in a same fin. Application Inverter for AC or DC motor control, Current stabilized power supply, Switching power supply. Unit DIODE Maximum Ratings Ratings Symbol Item Unit DFA100BA80 DFA100BA160 VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V Symbol Item Conditions Ratings Unit ID Output Current (D.C.) Three phase full wave, Tc 98 100 A IFSM Surge forward current cycle, 50/60HZ, peak value, non-repetitive 1186/1300 A Tj Operating Junction Temperaturea 40 to 150 Tstg Storage Temperature 40 to 125 VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute 2500 V Mounting M5 Recommended Value 1.5-2.5 15-25 2.7 28 Mounting N m Torque kgf B Terminal M5 Recommended Value 1.5-2.5 15-25 2.7 28 Mass Typical Value 150 g Electrical Characteristics Symbol Item Conditions Ratings Unit IRRM Repetitive Peak Reverse Current,max. j R RRM 12 mA T 150 V =V VFM Forward Voltage Drop,max. Tj 25 IF 100A Inst. measurement 1.30 V Rth j-c Thermal Impedance, max. Junction to Case TOTAL 0.20 /W Rth c-f Thermal Impedance, max. Case to Fin 0.10 /W 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi sanrex.com DFA100BA80/160 THYRISTOR Maximum Ratings Ratings Symbol Item Unit DFA100BA80 DFA100BA160 VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V VDRM Repetitive Peak off-State Voltage 800 1600 V Symbol Item Conditions Ratings Unit IT AV Average On-State Current 100 A Singl phase half wave. 180 conduction, Tc 92 TSM I Surge On-State Current cycle, 50/60HZ, peak value, non-repetitive 1186/1300 A 2 2 2 I t I t 7030 A S 1 di dt Critical Rate of Rise of On-State Current IG 100mA VD VDRM diG/dt 0.1A/ s 150 A/ s 2 VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute 2500 V Tj Operating Junction Temperature 40 to 135 Tstg Storage Temperature 40 to 125 Mounting M5 Recommended Value 1.5-2.5 15-25 2.7 28 Mounting N m Torque f B Terminals M5 Recommended Value 1.5-2.5 15-25 2.7 28 Mass Typical Value 150 g Electrical Characteristics Symbol Item Conditions Ratings Unit IDRM Repetitive Peak Off-State Current,max. Tj 135 VD VDRM 70 mA IRRM Repetitive Peak Reverse Current,max. D RRM 70 mA Tj 135 V V TM V Peak On-State Voltage,max. Tj 25 ITM 100A Inst. measurement 1.20 V GT I Gate Trigger Current,max. VD 6V IT 1A 70 mA VGT Gate Trigger Voltage,max. VD 6V IT 1A 3 V Critical Rate of Rise of Off- 2 dv dt Tj 125 VD VDRM 500 V/ s 3 State Voltage,min. Thermal Impedance, max. Junction to Case 0.36 Rth j-c /W Thermal Impedance, max. Case to Fin 0.10 Rth c-f /W SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi sanrex.com

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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