The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
completed by 30 June 2013.
MIL-PRF-19500/376K
30 March 2013
SUPERSEDING
MIL-PRF-19500/376J
20 November 2010
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER,
TYPES 2N2484, 2N2484UA, 2N2484UB, 2N2484UBC, 2N2484UBN, 2N2484UBCN JAN, JANTX, JANTXV,
JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHCA, JANHCB, JANKCA,
JANKCB, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for die. RHA level designators M, D, P, L, R, F, G and H are appended to the
device prefix to identify devices, which have passed RHA requirements.
* 1.2 Physical dimensions. See figure 1 (similar to TO-18), figure 2, (surface mount case outlines UA), figure 3,
(surface mount case outlines UB, UBC, UBN, and UBCN), and figures 4 and 5 (die).
* 1.3 Maximum ratings. Unless otherwise specified T = +25C.
A
Types
P (1) V V V I T and T R R
T CBO EBO CEO C J STG JA JSP
(2) (2)
T = +25 C
A
mW V dc V dc V dc mA dc
C C/W C/W
2N2484 360 60 6 60 50 -65 to +200 325 N/A
2N2484UA 360 60 6 60 50 -65 to +200 275 110
2N2484UB, UBN 360 60 6 60 50 -65 to +200 350 100
2N2484UBC, UBCN 360 60 6 60 50 -65 to +200 350 100
(1) For derating see figures 6, 7, and 8.
(2) For thermal impedance see figures 9, 10, 11, 12, and 13.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at MIL-PRF-19500/376K
1.4 Primary electrical characteristics. Unless otherwise specified, T = +25C.
A
h C |h |2 V (1)
fe obo fe CE(sat)
Limits
V = 5 V dc I = 0 I = 500 A dc I = 1.0 mA dc
CE E C C
I = 1 mA dc V = 5 V dc V = 5 V dc I = 0.1 mA dc
C CB CE B
f = 1 kHz f = 30 MHz
100 kHz f 1 MHz
pF V dc
Min 250 2.0
Max 900 5.0 7.0 0.3
NF h h
FE2 FE5
I = 10 A dc, V = 5 V dc
C CE
Limits
R = 10 k
g
f = 100 Hz f = 1000 Hz f = 10 kHz V = 5 V dc V = 5 V dc
CE CE
I = 1 mA dc
I = 10 A dc C
C
dB dB dB
Min 200 250
Max 7.5 3 2 500 800
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Copies of these documents are available online at