The documentation and process conversion measures
INCH POUND
necessary to comply with this document shall be
MIL-PRF-19500/317P
completed by 28 April 2013.
28 January 2013
SUPERSEDING
MIL-PRF-19500/317N
27 December 2010
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,
TYPES 2N2369A, 2N3227, 2N4449, 2N2369AU, 2N3227U, 2N2369AUA, 2N3227UA, 2N2369AUB,
2N2369AUBC, 2N2369AUBCN 2N3227UB, 2N3227UBC, 2N3227UBCN, 2N4449U, 2N4449UA, 2N4449UB,
2N4449UBC, AND 2N4449UBCN, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF,
JANSG, JANSH, JANHCA, JANHCB, JANKCA, JANKCB, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR,
JANKCF, JANKCG, AND JANKCH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, high speed switching
transistors (including dual devices). Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type.
Provisions for radiation hardness assurance (RHA) to four radiation levels is provided for JANTXV, JANS, JANHC,
and JANKC product assurance levels. RHA level designators M, D, P, L, R, F, G, and H are appended to
the device prefix to identify devices, which have passed RHA requirements.
* 1.2 Physical dimensions. See figure 1 (TO-18) for 2N2369A and 2N3227, figure 2 (TO-46) for 2N4449, figure 3
(UB, UBC, and UBCN), figure 4 (UA version), figure 5 (U version dual devices), and figures 6 and 7 (JANC die).
* 1.3 Maximum ratings. Unless otherwise specified, T = +25C.
A
Types V V V V T and
CBO EBO CEO CES J
PT TA = PT TC = PT TSP =
T
+25C +125C +125C (1) STG
W W W V dc V dc V dc V dc C
2N2369A, UA, UB, UBC, UBCN 0.36 (2) 0.36 (3)(4) 0.36 (3) 40 4.5 15 40
-65
2N4449, UA, UB, UBC, UBCN 0.36 (2) 0.36 (3)(4) 0.36 (3) 40 4.5 15 40
to
2N3227, UA, UB, UBC, UBCN 0.36 (2) 0.36 (3)(4) 0.36 (3) 40 6.0 20 40
+200
2N2369AU 0.5 (5) 40 4.5 15 40
2N4449U 0.5 (5) 40 4.5 15 40
2N3227U 0.5 (5) 40 6.0 20 40
See notes at end of table.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since
contact information can change, you may want to verify the currency of this address information using the
ASSIST Online database at MIL-PRF-19500/317P
1.3 Maximum ratings. Unless otherwise specified, T = +25C. - Continued.
A
*
Types R R R
JA JC JSP
C/W C/W C/W
2N2369A 400 150
2N4449 400 150
2N3227 400 150
2N2369AUA, UB, UBC, UBCN 486 210
2N4449UA, UB, UBC, UBCN 486 210
2N3227UA, UB, UBC, UBCN 486 210
2N2369AU 350 (6) 290 (7)
2N4449U 350 (6) 290 (7)
2N3227U 350 (6) 290 (7)
* (1) Applicable for UA, UB, UBC, UBCN and U packages.
(2) For TO-18 and TO-46 packages derate linearly 2.06 mW/C above T = +25C.
A
(3) Derate linerly 4.8 mW/C above T =+125C. See figures 8, 9, 10, 11, and 12.
C
(4) Power dissipation limited to 360 mW per chip regardless of thermal resistance.
* (5) For UA, UB, UBC, and UBCN packages mounted on FR-4 PCB (1 Oz. Cu) with contacts 20 mils larger than
package pads. See figure 13.
(6) One side only, derate linerly 2.857 mW/C above T = +25C.
SP
(7) Derate linearly 3.44 mW/C above T = +54.5C. See figure 13.
A
1.4 Primary electrical characteristics. Unless otherwise specified, T = +25C.
A
Type h (2) h (2) V t t t
FE2 FE4 h CE(sat)1 on off s
FE
(1) V = 0.4 V dc V = 1.0 V dc I = 10 mA dc I = 10 mA dc I = 10 mA dc I = 10 mA dc
CE CE V = 10 V dc C C C C
CE
I = 30 mA dc I = 100 mA dc I = 10 mA dc I = 1 mA dc I = 3 mA dc I = 3 mA dc I = I =
C C C B B1 B1 B1 B2
f = 100 MHz I = -1.5 mA dc I = -1.5 mA dc 10 mA dc
B2 B2
Min Max Min Max Min Max V dc Max ns ns ns
2N2369A 30 120 20 120 5.0 10 0.20 12 18 13
2N3227 40 250 30 150 5.0 10 0.20 12 25 18
2N4449 30 120 20 120 5.0 10 0.20 12 18 13
(1) Electrical characteristics for the A, AU, AUBC, U, UA, UB, and UBC suffix devices are identical to the
corresponding non-suffix device.
(2) Pulsed (see 4.5.1).
2