2N2905A
Silicon PNP Transistor
Data Sheet
Description Applications
General purpose
Low power
Semicoa Semiconductors offers:
PNP silicon transistor
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N2905AJ)
JANTX level (2N2905AJX)
JANTXV level (2N2905AJV)
JANS level (2N2905AJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Features
Radiation testing (total dose) upon request
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 0600
Reference document:
MIL-PRF-19500/290
Benefits
Qualification Levels: JAN, JANTX,
Please contact Semicoa for special configurations
JANTXV and JANS
www.SEMICOA.com or (714) 979-1900
Radiation testing available
Absolute Maximum Ratings T = 25C unless otherwise specified
C
Parameter Symbol Rating Unit
Volts
Collector-Emitter Voltage V 60
CEO
Volts
Collector-Base Voltage V 60
CBO
Volts
Emitter-Base Voltage V 5
EBO
mA
Collector Current, Continuous I 600
C
Power Dissipation, T = 25 C 0.8 W
A
P
T
5.7 mW/C
Derate above 60 C
Power Dissipation, T = 25 C 3.0 W
C
P
T
17.2 mW/C
Derate above 25 C
C/W
Thermal Resistance 175
R
JA
C
Operating Junction Temperature T -65 to +200
J
C
Storage Temperature T -65 to +200
STG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. H 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1
www.SEMICOA.com
2N2905A
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T = 25C
A
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Volts
Collector-Emitter Breakdown Voltage V I = 10 mA 60
(BR)CEO C
A
Collector-Base Cutoff Current I V = 60 Volts 10
CBO1 CB
nA
Collector-Base Cutoff Current I V = 50 Volts 10
CBO2 CB
O
A
Collector-Base Cutoff Current I V = 50 Volts, T = 150C 10
CBO3 CB A
A
Collector-Emitter Cutoff Current I V = 60 Volts 1
CES CE
A
Emitter-Base Cutoff Current I V = 5 Volts 10
EBO1 EB
nA
Emitter-Base Cutoff Current I V = 3.5 Volts 50
EBO2 EB
Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
On Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
h I = 0.1 mA, V = 10 Volts 75
FE1 C CE
h I = 1.0 mA, V = 10 Volts 100 450
FE2 C CE
h I = 10 mA, V = 10 Volts 100
FE3 C CE
DC Current Gain h I = 150 mA, V = 10 Volts 100 300
FE4 C CE
h I = 500 mA, V = 10 Volts 50
FE5 C CE
h I = 10 mA, V = 10 Volts 50
FE6 C CE
O
T = -55 C
A
V I = 150 mA, I = 15 mA 1.3
BEsat1 C B
Base-Emitter Saturation Voltage Volts
V I = 500 mA, I = 50 mA 2.6
BEsat2 C B
V I = 150 mA, I = 15 mA 0.4
CEsat1 C B
Collector-Emitter Saturation Voltage Volts
V I = 500 mA, I = 50 mA 1.6
CEsat2 C B
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude Common Emitter, Short V = 20 Volts, I = 50 mA,
CE C
|h | 2.0
FE
Circuit Forward Current Transfer Ratio f = 100 MHz
Small Signal Short Circuit Forward V = 10 Volts, I = 1 mA,
CE C
h 100
FE
Current Transfer Ratio f = 1 kHz
V = 10 Volts, I = 0 mA,
CB C
pF
Open Circuit Output Capacitance C 8
OBO
100 kHZ < f < 1 MHz
V = 2.0 Volts, I = 0 mA,
EB E
pF
Open Circuit Input Capacitance C 30
IBO
100 kHZ < f < 1 MHz
Switching Characteristics
t ns
on
Saturated Turn-On Time 45
Saturated Turn-Off Time t 300
off
ns
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. H 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com