X-On Electronics has gained recognition as a prominent supplier of 2N3737JANTX across the USA, India, Europe, Australia, and various other global locations. 2N3737JANTX are a product manufactured by Semicoa. We provide cost-effective solutions for 2N3737JANTX, ensuring timely deliveries around the world.

2N3737JANTX Semicoa

2N3737JANTX electronic component of Semicoa
Images are for reference only
See Product Specifications
Part No.2N3737JANTX
Manufacturer: Semicoa
Category: Unclassified
Description: Switching
Datasheet: 2N3737JANTX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.3387 ea
Line Total: USD 14.34 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 14.3387
10 : USD 13.5414
30 : USD 13.2056
50 : USD 12.9818
100 : USD 11.6607
250 : USD 11.5079
500 : USD 10.2545

   
Manufacturer
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We are delighted to provide the 2N3737JANTX from our Semicoa manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N3737JANTX and other electronic components in the Semicoa manufacturer and beyond.

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2N3737 Silicon NPN Transistor Data Sheet Description Applications General purpose Low power Semicoa Semiconductors offers: NPN silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N3737J) JANTX level (2N3737JX) JANTXV level (2N3737JV) JANS level (2N3737JS) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Radiation testing (total dose) upon request Features Hermetically sealed TO-46 metal can Also available in chip configuration Chip geometry 0806 Reference document: MIL-PRF-19500/395 Benefits Qualification Levels: JAN, JANTX, Please contact Semicoa for special configurations JANTXV and JANS www.SEMICOA.com or (714) 979-1900 Radiation testing available Absolute Maximum Ratings T = 25C unless otherwise specified C Parameter Symbol Rating Unit Collector-Emitter Voltage V 40 Volts CEO Collector-Base Voltage V 75 Volts CBO Emitter-Base Voltage V 5 Volts EBO Collector Current, Continuous I 1.5 A C W Power Dissipation, T = 25C 0.5 A P T 2.86 mW/C Derate linearly above 25C W Power Dissipation, T = 25C 1.9 C P T 11.3 mW/C Derate linearly above 25C Thermal Resistance 350 R C/W JA Operating Junction Temperature T J -65 to +200 C Storage Temperature T STG Semicoa Semiconductors, Inc. Copyright 2002 Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3737 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at T = 25C A Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Volts Collector-Emitter Breakdown Voltage V I = 10 mA 40 (BR)CEO C I V = 75 Volts 10 A CBO1 CB Collector-Base Cutoff Current I V = 30 Volts 250 nA CBO2 CB I V = 30 Volts, V = 2 Volts 200 nA CEX1 CE EB Collector-Emitter Cutoff Current I V = 30 Volts, V = 2 Volts, 250 A CEX2 CE EB T = 150C A I V = 5 Volts 10 A EBO1 EB Emitter-Base Cutoff Current I V = 4 Volts 100 nA EBO2 EB Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% On Characteristics Parameter Symbol Test Conditions Min Typ Max Units h I = 10 mA, V = 1 Volts 35 FE1 C CE h I = 150 mA, V = 1 Volts 40 FE2 C CE h I = 500 mA, V = 1 Volts 40 140 FE3 C CE DC Current Gain h I = 1 A, V = 1.5 Volts 20 80 FE4 C CE h I = 1.5 A, V = 5 Volts 20 FE5 C CE h I = 500 mA, V = 1 Volts 15 FE6 C CE T = -55C A V I = 10 mA, I = 1 mA 0.8 BEsat1 C B V I = 150 mA, I = 15 mA 1.0 BEsat2 C B Volts Base-Emitter Saturation Voltage V I = 500 mA, I = 50 mA 1.2 BEsat3 C B V I = 1 A, I = 100 mA 0.9 1.4 BEsat4 C B V I = 10 mA, I = 1 mA 0.2 CEsat1 C B V I = 150 mA, I = 15 mA 0.3 CEsat2 C B Volts Collector-Emitter Saturation Voltage V I = 500 mA, I = 50 mA 0.5 CEsat3 C B V I = 1 A, I = 100 mA 0.9 CEsat4 C B Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude Common Emitter, Short V = 10 Volts, I = 50 mA, CE C |h | 2.5 6.0 FE Circuit Forward Current Transfer Ratio f = 100 MHz V = 10 Volts, I = 0 mA, CB E pF Open Circuit Output Capacitance C 9 OBO 100 kHZ < f < 1 MHz V = 0.5 Volts, I = 0 mA, EB C pF Open Circuit Input Capacitance C 80 IBO 100 kHZ < f < 1 MHz Switching Characteristics Delay Time t V = 2 Volts, I = 1 A, 8 d BE C ns Rise Time t I = 100 mA 40 r B ns Saturated Turn-Off Time t I = 1 A, I =I =100 mA 60 OFF C B1 B2 Semicoa Semiconductors, Inc. Copyright 2002 Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com

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