2N3737
Silicon NPN Transistor
Data Sheet
Description Applications
General purpose
Low power
Semicoa Semiconductors offers:
NPN silicon transistor
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3737J)
JANTX level (2N3737JX)
JANTXV level (2N3737JV)
JANS level (2N3737JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Features
Hermetically sealed TO-46 metal can
Also available in chip configuration
Chip geometry 0806
Reference document:
MIL-PRF-19500/395
Benefits
Qualification Levels: JAN, JANTX,
Please contact Semicoa for special configurations
JANTXV and JANS
www.SEMICOA.com or (714) 979-1900
Radiation testing available
Absolute Maximum Ratings T = 25C unless otherwise specified
C
Parameter Symbol Rating Unit
Collector-Emitter Voltage V 40 Volts
CEO
Collector-Base Voltage V 75 Volts
CBO
Emitter-Base Voltage V 5 Volts
EBO
Collector Current, Continuous I 1.5 A
C
W
Power Dissipation, T = 25C 0.5
A
P
T
2.86 mW/C
Derate linearly above 25C
W
Power Dissipation, T = 25C 1.9
C
P
T
11.3 mW/C
Derate linearly above 25C
Thermal Resistance 350
R C/W
JA
Operating Junction Temperature T
J
-65 to +200
C
Storage Temperature T
STG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3737
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T = 25C
A
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Volts
Collector-Emitter Breakdown Voltage V I = 10 mA 40
(BR)CEO C
I V = 75 Volts 10 A
CBO1 CB
Collector-Base Cutoff Current
I V = 30 Volts 250
nA
CBO2 CB
I V = 30 Volts, V = 2 Volts 200 nA
CEX1 CE EB
Collector-Emitter Cutoff Current I V = 30 Volts, V = 2 Volts, 250
A
CEX2 CE EB
T = 150C
A
I V = 5 Volts 10 A
EBO1 EB
Emitter-Base Cutoff Current
I V = 4 Volts 100
nA
EBO2 EB
Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
On Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
h I = 10 mA, V = 1 Volts 35
FE1 C CE
h I = 150 mA, V = 1 Volts 40
FE2 C CE
h I = 500 mA, V = 1 Volts 40 140
FE3 C CE
DC Current Gain h I = 1 A, V = 1.5 Volts 20 80
FE4 C CE
h I = 1.5 A, V = 5 Volts 20
FE5 C CE
h I = 500 mA, V = 1 Volts 15
FE6 C CE
T = -55C
A
V I = 10 mA, I = 1 mA 0.8
BEsat1 C B
V I = 150 mA, I = 15 mA 1.0
BEsat2 C B
Volts
Base-Emitter Saturation Voltage
V I = 500 mA, I = 50 mA 1.2
BEsat3 C B
V I = 1 A, I = 100 mA 0.9 1.4
BEsat4 C B
V I = 10 mA, I = 1 mA 0.2
CEsat1 C B
V I = 150 mA, I = 15 mA 0.3
CEsat2 C B
Volts
Collector-Emitter Saturation Voltage
V I = 500 mA, I = 50 mA 0.5
CEsat3 C B
V I = 1 A, I = 100 mA 0.9
CEsat4 C B
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude Common Emitter, Short V = 10 Volts, I = 50 mA,
CE C
|h | 2.5 6.0
FE
Circuit Forward Current Transfer Ratio f = 100 MHz
V = 10 Volts, I = 0 mA,
CB E
pF
Open Circuit Output Capacitance C 9
OBO
100 kHZ < f < 1 MHz
V = 0.5 Volts, I = 0 mA,
EB C
pF
Open Circuit Input Capacitance C 80
IBO
100 kHZ < f < 1 MHz
Switching Characteristics
Delay Time t V = 2 Volts, I = 1 A, 8
d BE C
ns
Rise Time t I = 100 mA 40
r B
ns
Saturated Turn-Off Time t I = 1 A, I =I =100 mA 60
OFF C B1 B2
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com