INCH-POUND 
The documentation and process conversion measures 
 
necessary to comply with this document shall be 
MIL-PRF-19500/255Y 
completed by 22 May 2013. 
22 February 2013 
 
SUPERSEDING 
MIL-PRF-19500/255X 
16 March 2011 
 
 
PERFORMANCE SPECIFICATION SHEET 
 
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, 
TYPES 2N2221A, 2N2221AL, 2N2222A, 2N2222AL, 2N2221AUA, 2N2222AUA, 2N2221AUB, 2N2222AUB,  
2N2221AUBC, AND 2N2222AUBC, 2N2221AUBN, 2N2222AUBN, 2N2221AUBCN, 2N2222AUBCN, JAN, JANTX, 
JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, 
JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, 
JANHCR, JANHCF, JANHCG, JANHCH, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, 
JANKCG, AND JANKCH 
 
 
This specification is approved for use by all Departments 
and Agencies of the Department of Defense. 
 
 
The requirements for acquiring the product described herein shall consist of 
this specification sheet and MIL-PRF-19500. 
 
 
1.  SCOPE 
 
 1.1  Scope.  This specification covers the performance requirements for NPN, silicon, switching transistors.  Five 
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two 
levels of product assurance are provided for each unencapsulated device type.  Provisions for radiation hardness 
assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance 
levels.  RHA level designators M, D, P, L, R, F, G and H are appended to the device prefix to identify 
devices, which have passed RHA requirements. 
 
* 1.2  Physical dimensions.  See figure 1 (similar to TO-18), figure 2 (surface mount case outline UA), figure 3 
(surface mount case outlines UB, UBC, UBN, and UBCN), and figures 4, 5, and 6 (JANHC and JANKC). 
 
* 1.3  Maximum ratings.  Unless otherwise specified T = +25 C. 
A
 
Types I V V V T and T 
C CBO CEO EBO J STG
  
 mA dc V dc V dc V dc C 
      
All devices 800 75 50  6 
-65 to +200 
 
 
 
 
 
*  Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, 
 
ATTN:  VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil.  Since contact 
 
information can change, you may want to verify the currency of this address information using the ASSIST 
 
Online database at MIL-PRF-19500/255Y 
 
* 1.3  Maximum ratings.  Unless otherwise specified T = +25 C. - Continued. 
A
 
P  P  P  P      
T T T T
 
T = +25C T = +25C T = T = R R R R 
A C SP(IS) SP(AM) JA JC JSP(IS) JSP(AM)
Types 
(1) (2) (1) (2) +25C (1) (2) +25C (1) (2) (2) (3) (2) (3) (2) (3) (2) (3) 
W W W W C/W C/W C/W C/W 
 
2N2221A, AL 0.50 1 N/A N/A 325 150 N/A N/A 
2N2222A, AL 0.50 1 N/A N/A 325 150 N/A N/A 
2N2221AUA (4)  0.50 N/A 1 1.5 (4)  325 N/A 110 40 
2N2222AUA (4)  0.50 N/A 1 1.5 (4)  325 N/A 110 40 
2N2221AUB, UBC, 
(4)  0.50 N/A 1 N/A (4)  325 N/A 90 N/A 
UBN and UBCN  
        
2N2222AUB, UBC,  
(4)  0.50 N/A 1 N/A (4)  325 N/A 90 N/A 
UBN and UBCN  
 
(1)  For derating, see figures 7, 8, 9, 10, and 11. 
(2)  See 3.3 for abbreviations. 
(3)  For thermal impedance curves, see figures 12, 13, 14, 15, and 16. 
(4)  For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 8 
and 13 for the UA, UB, UC, UBN, and UBCN package and use R . 
JA
 
* 1.4  Primary electrical characteristics.  Unless otherwise specified, T = +25 C. 
A
 
 
h at V = 10 V dc 
FE CE
 
Limits 
h h h h  (1) h  (1) 
FE1 FE2 FE3 FE4 FE5
I = 0. 1 mA dc I = 1.0 mA dc I = 10 mA dc I = 150 mA dc I = 500 mA dc 
C C C C C
 AL, UA, UB, UBC, AL, UA, UB, UBC, AL, UA, UB, UBC, AL, UA, UB, UBC, AL, UA, UB, UBC, 
 UBN, and UBCN UBN, and UBCN UBN, and UBCN UBN, and UBCN UBN, and UBCN 
 2N2221A, 2N2222A 2N2221A, 2N2222A 2N2221A, 2N2222A 2N2221A, 2N2222A 2N2221A, 2N2222A 
      
Min 30              50 35             75 40            100 40            100 20              30 
Max  150           325 120           300 
 
Types Limit Switching (saturated) 
/h / C 
fe obo
  
f = 100 MHz 100 kHz  
    
V  = 20 V dc f  1 MHz 
CE
 
t t 
V = 10 V dc on off
I = 20 mA dc CB
C
 
See figure 17 See figure 18 
 I = 0 
E
      
   pF ns ns 
      
2N2221A, 2N2222A  Min 2.5    
AL, UA, UB, UBC, Max  8 35 300 
UBN, and UBCN 
 
Types Limit 
V  (1) V  (1) V  (1) V  (1) 
CE(sat)1 CE(sat)2 BE(sat)1 BE(sat)2
 
I = 150 mA dc I = 500 mA dc I = 150 mA dc I = 500 mA dc 
C C C C
 
I = 15 mA dc I = 50 mA dc I = 15 mA dc I = 50 mA dc 
B B B B
 
      
  V dc V dc V dc V dc 
      
2N2221A, 2N2222A  Min   0.6  
AL, UA, UB, UBC, Max 0.3 1.0 1.2 2.0 
UBN, and UBCN 
 
(1)  Pulsed see 4.5.1.  
 
 
2