1N647 Semiconductors

1N647 electronic component of Semiconductors Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 1N647 across the USA, India, Europe, Australia, and various other global locations. 1N647 are a product manufactured by Semiconductors. We provide cost-effective solutions for 1N647, ensuring timely deliveries around the world.

Part No. 1N647
Manufacturer: Semiconductors
Category: Unclassified
Description: 1N647 semiconductors
Datasheet:
Price (USD)
N/A


Availability 0
MOQ : 100
Multiples : 1
QtyUnit Price
100$ 0.665
250$ 0.5919
500$ 0.5523
1000$ 0.5182
N/A

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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We are delighted to provide the 1N647 from our Semiconductors manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N647 and other electronic components in the Semiconductors manufacturer and beyond.

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1N647 is a type of PN Junction Diode that is commonly used for a variety of purposes such as voltage regulating, signal mixing, signal amplification, and much more. It is also great for switching circuits and other high-frequency applications. It is made from silicon and has a maximum forward voltage drop of 0.75V. Additionally, it has a maximum forward current of 500mA, a reverse voltage of 6.4V and a junction temperature of 125C. It can also tolerate power dissipation up to 300mW.

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