G P 3 D 01 0 A 12 0A VDC 1200 V Q 56 nC C I 10 A F 1200V SiC Schottky Diode T ,max 175 C j T M Package A mp + Features Unipolar rectifier with surge current Zero reverse recovery current Fast, temperature-independent switching Avalanche tested to 125mJ* All parts tested to greater than 1,400V T M A mp + Benefits Near zero switching loss Higher efficiency Smaller heat sink Easy to parallel Part Package Marking GP3D010A120A 3D010A120 TO-220-2L T M A mp + Applications Solar Inverters Switch mode power supplies, UPS Power factor correction EV charging stations Maximum Ratings, at T =25 C, unless otherwise specified j Characteristics Symbol Conditions Values Unit T =25 C, T=175 C 33 C j Continuous forward current I T =125 C, T=175 C 18 A F** C j T =150 C, T=175 C 12 C j T =25 C, t =8.3 ms 120 Surge non-repetitive forward current C p I A FSM sine halfwave T =110 C, t =8.3 ms 110 C p Non-repetitive peak forward current I T =25 C, t =10 s 700 A F,max C p T =25 C, t =8.3 ms 60 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 50 C p Repetitive peak reverse voltage V T=25 C 1200 V RRM j Turn-on slew rate, 200 V/ns Diode dv/dt ruggedness dv/dt repetitive T =25 C Power dissipation P 174 W C tot** Operating junction & storage T, T Continuous -55175 C j storage temperature Soldering temperature T Wave soldering leads 260 C solder Mounting torque M3 Screw 1 N-m Notes: * EAS of 125 mJ is based on starting Tj = 25C, L = 1.0 mH, IAS = 15.81 A, V = 50 V. ** Typical Rth used JC Rev. 1.1, 4/17/2020 www.SemiQ.com p.1TM 1200V SiC Schottky Diode A m p + G P 3 D 01 0 A 12 0A Electrical Characteristics, at T =25 C, unless otherwise specified j Values Characteristics Symbol Conditions Unit min. typ. max. T=25 C DC blocking voltage V 1200 - - V j DC I =1.00mA, T=25 C Breakdown voltage V 1400 - - V R j BR I =10A, T=25 C - 1.50 1.65 F j Diode forward voltage V I =10A, T=125 C - 1.83 - V F F j I =10A, T=175 C - 2.11 2.70 F j V =1,200V, T=25 C - 2 20 R j V =1,400V, T=25 C - 7 - R j Reverse current I R mA V =1,200V, T=125 C - 11 - R j V =1,200V, T=175 C - 39 300 R j Total capacitive charge Q V =800V, T=25 C - 56 - nC C R j V =1V, f=1 MHz - 608 - R Total capacitance C V =400V, f=1 MHz - 53 - pF R V =800V, f=1 MHz - 39 - R Thermal Characteristics Values Characteristics Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R - - 0.86 1.11 C/W thJC Typical Performance 20 1.E-03 -55C -55C 18 25C 25C 16 1.E-04 75C 75C 125C 14 125C 175C 175C 12 1.E-05 10 8 1.E-06 6 4 1.E-07 2 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1,000 1,200 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T) Fig. 2 Reverse Characteristics (parameterized on T) j j Rev. 1.1, 4/17/2020 www.SemiQ.com p.2 I (A) F I (A) R