RClamp0531Z Ultra Small RClamp 1-Line, 5V ESD Protection PROTECTION PRODUCTS Description Features High ESD withstand Voltage: +/-12kV (Contact) and RailClamp TVS arrays are ultra low capacitance ESD +/- 15kV (Air) per IEC 61000-4-2 protection devices designed to protect high speed data Able to withstand over 1000 ESD strikes per IEC61000- interfaces. This device offers desirable characteristics 4-2 Level 4 for board level protection including fast response time, Ultra-small 0201 package low operating and clamping voltage, and no device Protects one high-speed data line Working voltage: +/- 5V degradation. Low capacitance: 0.30 pF typical Low leakage current: <5 nA typical (V =5V) R RClamp0531Z has a typical capacitance of only Extremely low dynamic resistance: 0.67 (Typ.) 0.30pF. This allows it to be used on circuits operating Solid-state silicon-avalanche technology in excess of 5GHz without signal attenuation. Mechanical Characteristics RClamp0531Z is in a 2-pin SLP0603P2X3B package. It measures 0.6 x 0.3 mm with a nominal height SLP0603P2X3B package of only 0.25mm. The leads are finished with lead-free Pb-Free, Halogen Free, RoHS/WEEE compliant NiAu. Each device will protect one line operating at 5 Nominal Dimensions: 0.6 x 0.3 x 0.25 mm Lead Finish: NiAu volts. It gives the designer the flexibility to protect Marking: Marking code + dot matrix date code single lines in applications where arrays are not practical. Packaging: Tape and Reel The combination of small size and high ESD surge capability makes them ideal for use in portable Applications applications such as cellular phones, digital cameras, and RF modules. RF Antenna and Modules FM Antenna USB 2.0 MHL GPS Package Dimension Schematic & Pin Configuration 0.62 0.32 1 0.22 0.40 BSC 2 0.250 Nominal Dimensions (mm) SLP0603P2X3B (Bottom View) RClamp0531Z 1 of 8 www.semtech.com Final Datasheet Rev 7.0 Semtech Revision date 12/20/2016Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 60 W PK Peak Pulse Current (tp = 8/20s) I 3 A PP ESD per IEC 61000-4-2 (Air) 15 V kV ESD ESD per IEC 61000-4-2 (Contact) 12 O Operating Temperature T -55 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V Pin 1 to 2 or 2 to 1 5 V RWM Reverse Breakdown Voltage V I = 1 mA, Pin 1 to 2 or 2 to 1 7 9 11 V BR BR Reverse Leakage Current I V = 5V, Pin 1 to 2 or 2 to 1 5 20 nA R RWM I = 1A 15 PP Clamping Voltage V tp = 8/20s V C I = 3A 20 PP I = 4A 13 PP 2 ESD Clamping Voltage V tp = 0.2/100ns V C I = 16A 21 PP 2,3 Dynamic Resistance R tp = 0.2/100ns 0.67 DYN Junction Capacitance C V = 0V to 5V, f = 1MHz 0.30 0.40 J R 4 Junction Capacitance C V = 0V to 5V, f = 1GHz 0.40 pF J R 4 Change in Capacitance Over V C V = 0V to 5V, f = 1MHz 0.040 R JVR R Notes 1) ESD gun return path connected to ESD ground plane. 2) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 3) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP 4) Guaranteed by design. Not production tested. RClamp0531Z 2 of 8 www.semtech.com Final Datasheet Rev 7.0 Semtech Revision Date 12/20/2016