Product Information

RCLAMP3324T.TCT

RCLAMP3324T.TCT electronic component of Semtech

Datasheet
ESD Suppressors / TVS Diodes LOW VOLTAGE 4-LINE ESD PROTECT

Manufacturer: Semtech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0879 ea
Line Total: USD 1.09

33608 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.4966
6000 : USD 0.4966

33608 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 1.0879
10 : USD 0.8717
100 : USD 0.7291
250 : USD 0.7072
500 : USD 0.6359
1000 : USD 0.5325
3000 : USD 0.5083
6000 : USD 0.5026
9000 : USD 0.4888

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Current Rating
Brand
Operating Supply Voltage
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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RClamp3324P Low Capacitance RailClamp 4-Line Surge and ESD Protection PROTECTION PRODUCTS Description Features Transient Protection to RailClamp 3324P provides ESD protection for high- IEC 61000-4-2 (ESD) 20kV (Air), 17kV (Contact) speed data interfaces. It features a high maximum ESD IEC 61000-4-4 (EFT) 4kV (5/50ns) withstand voltage of 17kV contact and 20kV air IEC 61000-4-5 (Lightning) 4.5A (8/20s) discharge per IEC 61000-4-2. RClamp3324P is designed Package design optimized for high speed layout to minimize both the ESD peak clamping and the TLP Protects four high-speed data lines clamping. Package inductance is reduced at each pin Working Voltage: 3.3V Low Capacitance: 0.65 pF maximum (I/O to GND) resulting in lower peak ESD clamping voltage. The Dynamic Resistance: 0.15 Ohms (Typ) dynamic resistance is among the industrys lowest at Solid-State Silicon-Avalanche Technology 0.15 Ohms (typical). Maximum capacitance on each line to ground is 0.65pF allowing the RClamp3324P to be Mechanical Characteristics used in applications operating in excess of 5GHz without SGP2510P8 Package signal attenuation. Each device will protect up to four Pb-Free, Halogen Free, RoHS/WEEE Compliant lines (two high-speed pairs). Nominal Dimensions: 2.5 x 1.0 x 0.60 mm Lead Finish: NiPdAu RClamp3324P is in a 10-pin SGP2510P8 package Molding Compound Flammability Rating: UL 94V-0 Marking : Marking Code + Date Code measuring 2.5 x 1.0mm with a nominal height of Packaging : Tape and Reel 0.60mm. The leads have a nominal pin-to-pin pitch of 0.50mm. Flow- through package design simplifies PCB Applications layout and maintains signal integrity on high-speed lines. USB 3.0 Industrial Equipment The combination of low peak ESD clamping, low Digital Visual Interface dynamic resistance, and innovative package design LVDS Interfaces enables this device to provide the highest level of ESD eSATA protection for applications such as USB 3.0, eSATA, and DisplayPort. Nominal Dimension Functional Schematic 2.50 12 1.00 0.50 BSC 0.60 Device Schematic Nominal Dimensions in mm RClamp3324P 1 of 8 www.semtech.com Final Datasheet Rev 6.1 Semtech Revision date October 4, 2016Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Current (tp = 8/20s) I 4.5 A PP (1) ESD per IEC 61000-4-2 (Contact) 17 V kV (1) ESD ESD per IEC 61000-4-2 (Air) 20 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units O O -40 C to 125 C Reverse Stand-Off Voltage V 3.3 V RWM Any I/O pin to GND tp = 0.2/100ns (TLP) Trigger Voltage V 8 V TRIG Any I/O pin to GND O T = 25 C 0.01 0.05 A Reverse Leakage Current I V = 3.3V R RWM O T = 125 C 0.150 A I = 1A, tp = 8/20s, (2) PP Clamping Voltage V 2.5 3.5 V C Any I/O pin to GND I = 4.5A, tp = 8/20s, (2) PP Clamping Voltage V 3.5 4.5 V C Any I/O pin to GND I = 4A, tp = 0.2/100ns (TLP) (3) PP ESD Clamping Voltage V 3.5 V C Any I/O pin to GND I = 16A, tp = 0.2/100ns (TLP) (3) PP ESD Clamping Voltage V 5.3 V C Any I/O pin to GND tp = 0.2/100ns (TLP) (3), (4) Dynamic Resistance R 0.15 Ohms DYN Any I/O pin to GND V = 0V, f = 1MHz R 0.60 0.65 pF Any I/O pin to GND Junction Capacitance C J V = 0V, f = 1MHz R 0.30 0.40 pF Between I/O Pins Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) (2): Measured using an 8/20us constant current source. (3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t = 70ns to t = 90ns. TLP TLP 1 2 (4): Dynamic resistance calculated from I = 4A to I = 16A TLP TLP RClamp3324P 2 of 8 www.semtech.com Final Datasheet Rev 6.1 Semtech Revision Date October 4, 2016

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
SEM
Semtech
Semtech Corporation
SEMTECH ELECTRONICS LIMITED
SEMTECH INTERNATIONAL
ST(Semtech)

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