SMS3.3 3.3 Volt TVS Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features Transient Protection to The SMS series of TVS arrays are designed to protect sensitive IEC 61000-4-2 (ESD):15kV (Air), 8kV (Contact) electronics from damage or latch-up due to ESD, lightning, IEC 61000-4-4 (EFT): 40A (5/50ns) and other voltage induces transient events. Each device will IEC 61000-4-5 (Lightning): 12A (8/20s) protect up to four lines operating at 3.3 volts. Protects four I/O lines Working voltage: 3.3V The SMS3.3 is a solid state device designed specifically for Low leakage current (<1A) Low clamping voltage transient suppression. It is constructed using Semtechs Low capacitance (35pF typical) proprietary EPD process technology. The EPD process provides Solid-state EPD TVS technology low standoff voltages with significant reductions in leakage current and capacitance over traditional pn junction processes. Mechanical Characteristics They offer desirable characteristics for board level protection EIAJ SOT23-6L Package including fast response time, low clamping voltage and no Pb-Free, Halogen Free, RoHS/WEEE Compliant device degradation. Molding Compound Flammability Rating: UL 94V-0 Marking : Marking Code The SMS3.3 may be used to meet the immunity requirements Packaging : Tape and Reel per EIA 481 of IEC 61000-4-2, level 4 (15kV air, 8kV contact discharge). Applications The low cost SOT23-6L package makes them ideal for use in portable electronics such as cell phones, PDAs and notebook Cell phone Handsets and Accessories computers. Microprocessor Based Equipment Personal Digital Assistants (PDAs) and Pagers Desktop PC and Servers Notebook, Laptop and Palmtop Computers Portable Instrumentation Peripherals MP3 Players Cordless Phones Circuit Diagram Schematic and Pin Configuration 1 3 4 6 1 6 2 5 3 4 2 5 SOT23-6L (Top View) SMS3.3 Page 1 of 7 www.semtech.com Final Datasheet Rev 6.0 Semtech 3/26/2019 Proprietary and ConfidentialAbsolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 220 W PK Peak Pulse Current (tp = 8/20s) I 12 A PP (1) ESD per IEC 61000-4-2 (Air) >25 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) >15 O Soldering Temperature T 260 (10 seconds) C L O Operating Temperature T -55to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V 3.3 V RWM Punch-Through Voltage V I = 2A 3.5 V PT PT Snap-Back Voltage V I = 50mA 2.8 V SB SB O Reverse Leakage Current I V = 3.3V, T = 25 C 0.05 0.5 A R RWM I = 1A, tp = 8/20s PP 4.5 Any I/O to GND I = 5A, tp = 8/20s PP Clamping Voltage V 6.8 V C Any I/O to GND I = 12A, tp = 8/20s PP 8.7 Any I/O to GND Steering Diode Forward Voltage I = 1A, tp = 8/20s PP V 1.7 V F (Reverse Clamping Voltage) Any I/O to GND Each I/O pin and Ground Junction Capacitance C 35 40 pF J V = 0V, f = 1MHz R Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) SMS3.3 Page 2 of 7 www.semtech.com Final Datasheet Rev 6.0 Semtech 3/26/2019 Proprietary and Confidential