Product Information

UCLAMP0501Z.TNT

UCLAMP0501Z.TNT electronic component of Semtech

Datasheet
ESD Suppressors / TVS Diodes 1 L 5V UNI 10PF IN SLP0603P2X3

Manufacturer: Semtech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 10000
Multiples : 10000
10000 : USD 0.1162
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.3979
10 : USD 0.3093
100 : USD 0.1874
500 : USD 0.1736
1000 : USD 0.1173
2500 : USD 0.115
10000 : USD 0.1046
20000 : USD 0.1046
50000 : USD 0.1012
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Current Rating
Operating Temperature Range
Brand
Operating Supply Voltage
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Clamp0501Z Ultra Small Clamp 1-Line, 5V ESD Protection PROTECTION PRODUCTS - Clamp Description Features Clamp TVS diodes are designed to protect sensitive u Transient protection for data lines to electronics from damage or latch-up due to ESD. They IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) are designed to replace 0201 size multilayer varistors u Ultra-small package (MLVs) in portable applications such as cell phones, u Protects one data or power line notebook computers, and other portable electronics. It u Low ESD clamping voltage features large cross-sectional area junctions for conduct- u Working voltage: +5V ing high transient currents. This device offers desirable u Low capacitance: 10pF maximum characteristics for board level protection including fast u Low leakage current response time, low operating and clamping voltage, and u Solid-state silicon-avalanche technology no device degradation. Clamp 0501Z features extremely good ESD protection Mechanical Characteristics characteristics highlighted by low typical dynamic resis- tance, and low peak ESD clamping voltage. Each device u SLP0603P2X3 package will protect one data or power line operating at +5 Volts. u Pb-Free, Halogen Free, RoHS/WEEE Compliant Clamp0501Z is in a 2-pin SLP0603P2X3 package. It u Nominal Dimensions: 0.6 x 0.3 x 0.25 mm measures 0.6 x 0.3 mm with a nominal height of only u Lead Finish: NiAu 0.25mm. Leads are nished with NiAu. The small pack- u Marking: Marking Code age gives the designer the exibility to protect single u Packaging: Tape and Reel lines in applications where arrays are not practical. The combination of small size and high ESD surge capability Applications makes them ideal for use in portable applications such as cellular phones, digital cameras, and tablet PCs. u Cellular Handsets & Accessories u Notebook Computers u Tablet PC u Portable Instrumentation u Peripherals Package Dimensions Schematic & Pin Con guration 0.62 0.22 0.32 0.16 0.355 BSC 0.25 Nominal Dimensions in mm SLP0603P2X3 (Bottom View) www.semtech.com 10/30/2014 1Clamp0501Z PROTECTION PRODUCTS Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/20s) P 12 W PK Peak Pulse Current (tp = 8/20s) I 1 A PP (1) ESD per IEC 61000-4-2 (Air) 15 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) 8 O Operating Temperature T -55 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise speci ed) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V Pin 1 to 2 5 V RWM I = 1mA BR Reverse breakdown Voltage V 6.5 7.5 9 V BR Pin 1 to 2 V = 5V RWM Reverse Leakage Current I 3 50 nA R Pin 1 to 2 Clamping Voltage V I = 1A, tp = 8/20s 12 V C PP I = 10mA F Forward Voltage V 1 1.2 V F Pin 2 to 1 I = +4A 2 PP ESD Clamping Voltage V 11 V C tp = 0.2/100ns I = +16A 2 PP ESD Clamping Voltage V 22 V C tp = 0.2/100ns 2, 3 Dynamic Resistance R tp = 100ns 0.9 Ohms DYN I/O pin to GND Junction Capacitance C V = 0V 8 10 pF J R f = 1MHz Notes 1)Measured with a 20dB attenuator, 50 Ohm scope input impedance, 2GHz bandwidth. ESD gun return path connected to ESD ground plane. 2)Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t1 = 70ns to t2 = 90ns. TLP TLP 3) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP www.semtech.com 2014 Semtech Corporation. 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
SEM
Semtech
Semtech Corporation
SEMTECH ELECTRONICS LIMITED
SEMTECH INTERNATIONAL
ST(Semtech)

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