Product Information

FDN335N

FDN335N electronic component of Shikues

Datasheet
MOSFET N Channel 20V 2A 1.3V @ 250uA 80mO @ 3.6A,4.5V SOT-23 RoHS
Manufacturer: Shikues
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0685 ea
Line Total: USD 0.68

33775 - Global Stock
Ships to you between
Tue. 14 May to Fri. 17 May
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
28411 - WHS 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 10
Multiples : 10

Stock Image

FDN335N
Shikues

10 : USD 0.0537
100 : USD 0.0474
300 : USD 0.0443
3000 : USD 0.0387
6000 : USD 0.0369
9000 : USD 0.0359

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The FDN335N MOSFET N Channel 20V 2A 1.3V @ 250uA 80mO @ 3.6A,4.5V SOT-23 RoHS manufactured by Shikues is a small-outline metal oxider semiconductor field-effect transitor (MOSFET) that operates in an N-type channel. The device has a maximum continuous drain current of 2A and a typical drain-source voltage (VDS) of 20V. It has a gate-source voltage (VGS) theshold of 1.3V and a total gate charge (Qg) of 80mO at VGS = 4.5V. The package size is SOT-23 (5-pin) and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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