Product Information

FDN335N

FDN335N electronic component of ON Semiconductor

Datasheet
Transistor: N-MOSFET; unipolar; 20V; 1.7A; 500mW; SuperSOT-3

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1378 ea
Line Total: USD 413.4

49470 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
49470 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN335N
ON Semiconductor

3000 : USD 0.1378
6000 : USD 0.1378
12000 : USD 0.1378
15000 : USD 0.1378
45000 : USD 0.1378

4457 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

FDN335N
ON Semiconductor

5 : USD 0.2386
50 : USD 0.2072
150 : USD 0.1938
500 : USD 0.1771
3000 : USD 0.1697
6000 : USD 0.1652

1655 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1

Stock Image

FDN335N
ON Semiconductor

5 : USD 0.4914
25 : USD 0.3016
72 : USD 0.2288
197 : USD 0.2171

     
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Package
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
LoadingGif

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The FDN335N is a low power dual N-Channel MOSFET transistor manufactured by ON Semiconductor. It has a drain-source voltage of 30V and a rated drain current of 8A. It also has a drain source on-resistance of 4.5 ohms. It can operate in temperatures ranging from -55°C to +150°C. The FDN335N is designed to help control high power applications like motor control and high reliability power switch circuits.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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