Product Information

FDN340P

FDN340P electronic component of Shikues

Datasheet
MOSFET P Channel 20V 2A 1V @ 250uA 120mO @ 3A,4.5V SOT-23 RoHS
Manufacturer: Shikues
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0551 ea
Line Total: USD 0.55

2192 - Global Stock
Ships to you between
Tue. 14 May to Fri. 17 May
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
611 - WHS 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 10
Multiples : 10

Stock Image

FDN340P
Shikues

10 : USD 0.068
100 : USD 0.0554
300 : USD 0.049
3000 : USD 0.0403
6000 : USD 0.0365
9000 : USD 0.0346

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The FDN340P with MOSFET P Channel 20V 2A 1V @ 250uA 120mO @ 3A,4.5V SOT-23 RoHS is a high-performance enhancement-mode power MOSFET developed by Shikues specifically for applications that require high speed switching. It is an ideal solution for switch-mode power supplies, DC-DC converters, as well as audio and video equipment. The device is constructed from a silicon-carbon gate and features low input capacitance, low gate resistance, and low threshold voltage. The FDN340P can operate up to 20V at 2A, with a 1V gate-source voltage and 250µA gate current. It also offers a 120mOhm on-state resistance at 3A, 4.5V source voltage and room temperature, and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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